Author: David G. Seiler
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 734
Book Description
Characterization and Metrology for ULSI Technology, 2000
Author: David G. Seiler
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 734
Book Description
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 734
Book Description
Characterization and Metrology for ULSI Technology: 2003
Author: David G. Seiler
Publisher: American Institute of Physics
ISBN:
Category : Computers
Languages : en
Pages : 868
Book Description
The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Topics include: integrated circuit history, challenges and overviews, front end, lithography, interconnect and back end, and critical analytical techniques. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continue the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The editors believe that this book of collected papers provides a concise and effective portrayal of industry characterization needs and the way they are being addressed by industry, academia, and government to continue the dramatic progress in semiconductor technology. Hopefully, it will also provide a basis for stimulating advances in metrology and new ideas for research and development.
Publisher: American Institute of Physics
ISBN:
Category : Computers
Languages : en
Pages : 868
Book Description
The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Topics include: integrated circuit history, challenges and overviews, front end, lithography, interconnect and back end, and critical analytical techniques. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continue the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The editors believe that this book of collected papers provides a concise and effective portrayal of industry characterization needs and the way they are being addressed by industry, academia, and government to continue the dramatic progress in semiconductor technology. Hopefully, it will also provide a basis for stimulating advances in metrology and new ideas for research and development.
Characterization and Metrology for ULSI Technology 2005
Author: David G. Seiler
Publisher: American Institute of Physics
ISBN:
Category : Computers
Languages : en
Pages : 714
Book Description
The worldwide semiconductor community faces increasingly difficult challenges in the era of silicon nanotechnology and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continuing the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The book also covers emerging nano-devices and the corresponding metrology challenges that arise.
Publisher: American Institute of Physics
ISBN:
Category : Computers
Languages : en
Pages : 714
Book Description
The worldwide semiconductor community faces increasingly difficult challenges in the era of silicon nanotechnology and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continuing the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The book also covers emerging nano-devices and the corresponding metrology challenges that arise.
Istfa 2003
Author: ASM International
Publisher: ASM International
ISBN: 1615030867
Category : Technology & Engineering
Languages : en
Pages : 534
Book Description
Publisher: ASM International
ISBN: 1615030867
Category : Technology & Engineering
Languages : en
Pages : 534
Book Description
NISTIR.
Semiconductor Material and Device Characterization
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
National Semiconductor Metrology Program, NIST List OF Publications, LP 103, May 2000
Journal of Research of the National Institute of Standards and Technology
Semiconductor Silicon 2002
Author: Howard R. Huff
Publisher: The Electrochemical Society
ISBN: 9781566773744
Category : Science
Languages : en
Pages : 650
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566773744
Category : Science
Languages : en
Pages : 650
Book Description
ULSI Process Integration II
Author: Cor L. Claeys
Publisher: The Electrochemical Society
ISBN: 9781566773089
Category : Technology & Engineering
Languages : en
Pages : 636
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566773089
Category : Technology & Engineering
Languages : en
Pages : 636
Book Description