Author: H. E. G. LuxtonPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Characterisation and Application of Microwave Field Effect Transistors
Author: H. E. G. LuxtonCharacterisation and Application of Microwave Field Effect Transistors
Author: Hubert Ernest George LuxtonPublisher:
ISBN:
Category : Microwave transistors
Languages : en
Pages : 392
Book Description
Modeling and Characterization of RF and Microwave Power FETs
Author: Peter AaenPublisher: Cambridge University Press
ISBN: 113946812X
Category : Technology & Engineering
Languages : en
Pages : 375
Book Description
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Microwave Field-effect Transistors
Author: Raymond Sydney PengellyPublisher: Wiley-Blackwell
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 702
Book Description
Microwave Field-effect Transistors
Author: Raymond S. PengellyPublisher: John Wiley & Sons
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 496
Book Description
Design, Fabrication, and Characterization of InP-based Heterostructure Field-effect Transistors for High-power Microwave Applications
Author: Daniel Gerard BallegeerPublisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 378
Book Description
Microwave Characterisation of Electrodes and Field Effect Transistors Based on Graphene
Author: Organic Field Effect Transistors
Author: Ioannis KymissisPublisher: Springer Science & Business Media
ISBN: 0387921346
Category : Technology & Engineering
Languages : en
Pages : 156
Book Description
Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
Electrical and Thermal Characterization of MESFETs, HEMTs, and HBTs
Author: Robert AnholtPublisher: Artech House Microwave Library
ISBN:
Category : Science
Languages : en
Pages : 338
Book Description
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Ferroelectric-Gate Field Effect Transistor Memories
Author: Byung-Eun ParkPublisher: Springer Nature
ISBN: 9811512124
Category : Technology & Engineering
Languages : en
Pages : 421
Book Description
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.