Carbon Doping of III-V Compound Semiconductors PDF Download

Author: Amy Jo Moll
Publisher:
ISBN:
Category :
Languages : en
Pages : 288

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Author: Keh Yung Cheng
Publisher: Springer Nature
ISBN: 3030519031
Category : Technology & Engineering
Languages : en
Pages : 537

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Book Description
This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Author: S. J. Pearton
Publisher: World Scientific
ISBN: 9789810218843
Category : Technology & Engineering
Languages : en
Pages : 568

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Book Description
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Author: S. N. G. Chu
Publisher: The Electrochemical Society
ISBN: 9781566770934
Category : Technology & Engineering
Languages : en
Pages : 324

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Author: Anthony C. Jones
Publisher: John Wiley & Sons
ISBN: 3527614621
Category : Science
Languages : en
Pages : 352

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Book Description
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.

Author: Paul H. Holloway
Publisher: Cambridge University Press
ISBN: 0080946143
Category : Technology & Engineering
Languages : en
Pages : 937

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Book Description
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

Author: S. J. Pearton
Publisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 944

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: Devendra K. Sadana
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 758

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: Robert K. Willardson
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 590

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Book Description

Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451

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Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.