Caractérisation de diodes Schottky en diamant de structure pseudo-verticale PDF Download

Author: Gaëtan Perez
Publisher:
ISBN:
Category :
Languages : fr
Pages : 0

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Le diamant est souvent défini comme le matériau ultime pour la réalisation de composants à semi-conducteurs pour des applications d'électronique de puissance. Bien que plusieurs interrupteurs de puissance en diamant soient parus à l'échelle mondiale, ils sont à l'heure actuelle à l'état de prototype et de preuve de concept. Il est donc nécessaire de comprendre leurs mécanismes de fonctionnement afin de pouvoir utiliser tout leur potentiel dans des convertisseurs de puissance. Dans cette thèse, l'analyse se focalise sur des diodes Schottky en diamant de structure pseudo-verticale. Des caractérisations statiques et en commutation des diodes Schottky ont tout d'abord été réalisées. Elles ont permis d'extraire les caractéristiques des composants et de les intégrer dans des convertisseurs de puissance afin d'analyser leur comportement en commutation. L'utilisation et la gestion des diodes dans des convertisseurs ont ensuite été étudiées. Ces études ont permis de proposer des modifications de la structure des diodes afin d'améliorer la performance de leur intégration dans des convertisseurs de puissance. Finalement l'analyse théorique des performances d'une diode Schottky en diamant dans un convertisseur est réalisée. La comparaison entre ces performances et celles d'une diode Schottky en SiC a permis de mettre en évidence les particularités des composants en diamant ainsi que les bénéfices qu'ils peuvent apporter à l'électronique de puissance.

Author: Aboulaye Traoré
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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This thesis was focused on high power diamond Schottky diodes fabrication. Diamond growth and its doping are today well mastered. The advent of vertical architectures (diode active layer grown on heavily doped diamond substrate) and pseudo-vertical (stack of diode active layer and heavily doped layer grown on insulating substrate) allowed minimizing the high serial resistance, which was induced by the high ionization energy of acceptor-type dopants (boron doped diamond) preferably used in rectifiers fabrications.Besides these geometrical configurations favoring high forward currents, diamond Schottky diodes (pseudo vertical or vertical structures) were limited by: I) the quality of diode active layer altered by defects propagation from heavily doped layer thus leading to lower blocking voltage (maximum critical field of 3 MV/cm reported) than the theoretical values (theoretical values of critical field of 10 MV/cm), II) Schottky electrodes selected and the thermal and chemical stability of interfaces formed with oxygen-terminated diamond surface (required getting a Schottky contact and reducing as much as possible the interface states). Schottky metal selection and diamond surface pretreatment are crucial to get low barrier heights (low forward voltage drop and so low losses), low defects density at interfaces (low leakage current), and a thermally stable interface (high operating temperature). In this thesis, we demonstrated that a pseudo vertical diamond Schottky diode based on an oxygen-terminated surface covered by an easily oxidizable metal like zirconium (Zr) combined with an optimal heavily doped layer, allows overcoming these limitations. We first found a trade-off between the thickness of heavily doped layer and its doping level in order to minimize defects generations and thus improve the quality of diode active layer grown on the heavily doped layer (Less defects propagations). On a second hand, the Zr metallic electrodes selected gave rise to a thin zirconia interface layer which was thermally stable thus preventing the oxygen layer desorption. Zr/oxidized diamond rectifiers exhibited better features than the current state of art: a high forward current density (1000 A/cm2 at 6 V), a high critical field above 7 MV/cm (1000 V blocking voltage with a leakage current less than 1 pA), a Baliga's power figure of merit above 244 MW/cm2 (the highest value reported), a good reproducibility regardless of diodes and samples, the possibility to get a barrier heights below 1 eV by annealing, and a thermal stability higher than 500°C.

Author: Rozita Rouzbahan (Doctor of Sciences: Physics)
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Author: Rozita Rouzbahani
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Author: Satoshi Koizumi
Publisher: Woodhead Publishing
ISBN: 0081021844
Category : Technology & Engineering
Languages : en
Pages : 468

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Book Description
Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Author: Wade H. Shafer
Publisher: Springer
ISBN: 9780306341205
Category : Science
Languages : en
Pages : 320

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Masters Theses in the Pure and Applied Sciences was first conceived, published, and dis· seminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) *at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the ac· tivity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volume were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 20 (thesis year 1975) a total of 10,374 theses titles from 28 Canadian and 239 United States universities. We are sure that this broader base for theses titles reported will greatly enhance the value of this important annual reference work. The organization of Volume 20 is identical to that of past years. It consists of theses titles arranged by discipline and by university within each discipline.

Author: B. Jayant Baliga
Publisher: Springer
ISBN: 3319939882
Category : Technology & Engineering
Languages : en
Pages : 1114

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Book Description
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Author: E. H. Nicollian
Publisher: John Wiley & Sons
ISBN: 047143079X
Category : Technology & Engineering
Languages : en
Pages : 928

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Book Description
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

Author: B. Jayant Baliga
Publisher: William Andrew
ISBN: 1455731536
Category : Technology & Engineering
Languages : en
Pages : 733

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Book Description
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.

Author: M.S. Dresselhaus
Publisher: Springer Science & Business Media
ISBN: 3642771718
Category : Science
Languages : en
Pages : 212

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Book Description
Carbon has always been a unique and intriguing material from a funda mental standpoint and, at the same time, a material with many technological uses. Carbon-based materials, diamond, graphite and their many deriva tives, have attracted much attention in recent years for many reasons. Ion implantation, which has proven to be most useful in modifying the near surface properties of many kinds of materials, in particular semiconductors, has also been applied to carbon-based materials. This has yielded, mainly in the last decade, many scientifically interesting and technologically impor tant results. Reports on these studies have been published in a wide variety of journals and topical conferences, which often have little disciplinary overlap, and which often address very different audiences. The need for a review to cover in an integrated way the various diverse aspects of the field has become increasingly obvious. Such a review should allow the reader to get an overview of the research that has been done thus far, to gain an ap preciation of the common features in the response of the various carbon to ion impact, and to become aware of current research oppor allotropes tunities and unresolved questions waiting to be addressed. Realizing this, and having ourselves both contributed to the field, we decided to write a review paper summarizing the experimental and theoretical status of ion implantation into diamond, graphite and related materials.