Author: Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 916
Book Description
Cadmium Sulfide/copper Sulfide Heterojunction Cell Research by Sputter Deposition
Author: John A. ThorntonPublisher:
ISBN:
Category : Cadmium sulfide photoconductive cells
Languages : en
Pages : 86
Book Description
Energy Research Abstracts
Author: Monthly Catalog of United States Government Publications
Author: Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1064
Book Description
Monthly Catalogue, United States Public Documents
Author: Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1372
Book Description
Solar Energy Update
Author: Government reports annual index
Author: Government Reports Announcements & Index
Author: Government Reports Annual Index: Keyword A-L
Author: Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 886
Book Description
Scientific and Technical Aerospace Reports
Author: Cadmium Sulfide/copper Sulfide Heterojunction Cell Research. Quarterly Technical Progress Report, February 26-May 31, 1979
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
All-vacuum sputter deposited heterojunction solar cells of the CdS/Cu2S and Cd/sub 1-x/Zn/sub x/S/Cu2S types have been fabricated on glass substrates by dc reactive sputtering using cylindrical-post magnetron sputtering sources and Ar-H2S working gases. The rear electrode is Nb. The top grid electrode is Au sputter deposited through a mechanical mask. Preliminary measurements on nonoptimized cells have yielded efficiencies of about 0.4% with short circuit currents of about 3 mA/cm2, open circuit voltages of about 0.35V and fill factors of about 0.37. Extensive modifications are being made to the deposition apparatus which will permit greater control over the process variables and optimization of the cells. A series of experiments are reported which indicated that at the high deposition temperatures used for the Cd(Zn)S deposition (approx. 300°C), an electrically active impurity, capable of influencing both the series resistance and the junction behavior of the cells, may pass from the Nb into the Cd(Zn)S.