Bibliography on Semiconductor Nuclear Radiation Detectors PDF Download

Author:
Publisher:
ISBN:
Category : Nuclear counters
Languages : en
Pages : 18

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Author: E. Bock
Publisher:
ISBN:
Category : Semiconductor nuclear counters
Languages : en
Pages : 0

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Author: E. Bock
Publisher:
ISBN:
Category : Semiconductor nuclear counters
Languages : en
Pages : 137

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Author: I. C. Brownridge
Publisher: Springer Science & Business Media
ISBN: 1461345987
Category : Technology & Engineering
Languages : en
Pages : 222

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A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.

Author: Gerhard Lutz
Publisher: Springer
ISBN: 3540716793
Category : Technology & Engineering
Languages : en
Pages : 351

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Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.

Author: James M. McKenzie
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 184

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Author: Krzysztof Iniewski
Publisher: CRC Press
ISBN: 1439803862
Category : Medical
Languages : en
Pages : 402

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Semiconductor Radiation Detection Systems addresses the state-of-the-art in the design of semiconductor detectors and integrated circuit design, in the context of medical imaging using ionizing radiation. It addresses exciting new opportunities in X-ray detection, Computer Tomography (CT), bone dosimetry, and nuclear medicine (PET, SPECT). In addition to medical imaging, the book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection, and border control. Features a chapter written by well-known Gamma-Ray Imaging authority Tadayuki Takahashi Assembled by a combination of top industrial experts and academic professors, this book is more than just a product manual. It is practical enough to provide a solid explanation of presented technologies, incorporating material that offers an optimal balance of scientific and academic theory. With less of a focus on math and physical details, the author concentrates more on exploring exactly how technologies are being used. With its combined coverage of new materials and innovative new system approaches, as well as a succinct overview of recent developments, this book is an invaluable tool for any engineer, professional, or student working in electronics or an associated field.

Author: Helmuth Spieler
Publisher: OUP Oxford
ISBN: 0191523658
Category : Technology & Engineering
Languages : en
Pages : 513

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Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.

Author: D. N. Poenaru
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 414

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CONTENTS - MAIN NOTATIONS - CONTENTS - CHAPTER I. - INTERACTION OF THE NUCLEAR RADIATION WITH MATTER - 1.1. Interaction of heavy charged particles with matter - 1.2. Passage of electrons through matter - 1.3. Interaction processes of gamma and X-rays - 1.4. Interaction processes of neutrons - 1.5. Conclusions - CHAPTER II. - FUNDAMENTAL PROCESSES IN SEMICONDUCTORS AND METALS - 2.1. Schrödinger equation. The particle inside the potential well - 2.2. The hydrogen atom - 2.3. Theory of the periodic system of elements - 2.4. Electrons in crystals - 2.5. Effective mass - 2.6. Energy bands - 2.7. Statistical distributions - 2.8. Equilibrium density of charge carriers in semiconductors - 2.9. Transport phenomena - 2.10. Recombination phenomena - 2.11. P-N junction - 2.12. Phenomena at the metal-semiconductor interface - CHAPTER III. - WORKING PRINCIPLES OF NUCLEAR RADIATION SEMICONDUCTOR DETECTORS - 3.1. Charge-carrier injection. The mean energy for electron-hole pair production - 3.2. The drift of charge-carriers in the electric field. The shape of the current and voltage pulse given by the collection of a single pair. - 3.3. Collection time of electron-hole pairs in a P-N abrupt junction - 3.4. Collection time of electron-hole pairs in coaxial Ge (Li) detectors - 3.5. Influence of SD equivalent circuit elements on the voltage and current pulse shape - 3.6. Collection of charge-carriers in real devices - 3.7. Collection of electric charges by diffusion from outside the depletion layer - 3.8. Detector noise - 3.9. Detector energy resolution - CHAPTER IV - CHARACTERISTICS OF SEMICONDUCTOR DETECTORS - 4.1. Electrical characteristics - 4.2. Detection characteristics - 4.3. Effects of temperature, magnetic field and light on the semiconductor detector characteristics - 4.4. Detector sensitivity to neutrons and gamma-rays - 4.5. Effects of radiation damage on detector characteristics - CHAPTER V - SEMICONDUCTOR DETECTOR TYPES - 5.1. Methods for obtaining high electric fields in semiconductors - 5.2. Homogeneous semiconductor detectors - 5.3. Diffused N-P junction detectors - 5.4. Surface-barrier detectors - 5.5. Guard-ring detectors - 5.6. Totally depleted detectors - 5.7. Neutron detectors - 5.8. Special detectors - 5.9. NIP detectors - CHAPTER VI - AMPLIFICATION OF SEMICONDUCTOR DETECTOR ELECTRIC PULSES - 6.1. Electric charge to voltage pulse conversion - 6.2. Charge-sensitive-preamplifier-noise specification and measurement - 6.S. Amplifier-noise sources - 6.4. Effects of amplifier shaping circuits on noise spectra - 6.5. RC-RC amplifier signal to noise ratio - CHAPTER VII - SEMICONDUCTOR DETECTOR ASSOCIATED ELECTRONICS - 7.1. Spectrometers with semiconductor detectors - 7.2. Charge sensitive preamplifiers - 7.3. Main amplifier - 7.4. Amplitude analyser and expander - 7.5. High amplitude stability pulse generator - 7.6. Transistorized apparatus - APPENDIX A I: Basic properties of Si and Ge - APPENDIX A II: Main natural and artificial alpha sources - APPENDIX A III: Analysis of some circuits used in charge sensitive preamplifiers - REFERENCES -

Author: Robert W. Kuckuck
Publisher:
ISBN:
Category : Nuclear spectroscopy
Languages : en
Pages : 72

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