BEEM 94. Annual Workshop on Ballistic Electron Emission Microscopy (5th) Held in New York on January 24, 1994 PDF Download

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Languages : en
Pages : 44

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Partial contents: Electron transport across interfaces and surfaces: an overview; BEEM studies of strain-tuned semiconductor interfaces; Transport studies in semiconductor heterostructures using BEEM; Spectroscopic studies of quantum-wells and -wires using an STM; BEEM in pinholes of NiS2 films on n- Si(111)-7x7: determination of the impact ionization quantum yield in Si; Low- temperature UHV BEEM of epitaxial CoSi2/Si(111); Interfacial barrier studies of epitaxial CoGa on n-type (100) GaAs with BEEM; BEEM on Au/Si(111)7x7 and Au/ CaF2/Si(111)7x7; Temperature dependence of Schottky barriers as probed by BEEM; Nanoscopic barrier height distributions at metal/semiconductor interfaces and observation of critical lengths; BEEM studies of reversed-biased Schottky diodes; Ballistic models applied to low-temperature BEEM measurements of Au/Si interfaces; Electron inelastic mean free path and spatial resolution of BEEM.

Author: British Library. Document Supply Centre
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Category : Congresses and conventions
Languages : en
Pages : 874

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Category : Science
Languages : en
Pages : 840

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Category : Government publications
Languages : en
Pages : 1690

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Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800

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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Author: Peter W. Hawkes
Publisher: Springer Nature
ISBN: 3030000699
Category : Technology & Engineering
Languages : en
Pages : 1561

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This book features reviews by leading experts on the methods and applications of modern forms of microscopy. The recent awards of Nobel Prizes awarded for super-resolution optical microscopy and cryo-electron microscopy have demonstrated the rich scientific opportunities for research in novel microscopies. Earlier Nobel Prizes for electron microscopy (the instrument itself and applications to biology), scanning probe microscopy and holography are a reminder of the central role of microscopy in modern science, from the study of nanostructures in materials science, physics and chemistry to structural biology. Separate chapters are devoted to confocal, fluorescent and related novel optical microscopies, coherent diffractive imaging, scanning probe microscopy, transmission electron microscopy in all its modes from aberration corrected and analytical to in-situ and time-resolved, low energy electron microscopy, photoelectron microscopy, cryo-electron microscopy in biology, and also ion microscopy. In addition to serving as an essential reference for researchers and teachers in the fields such as materials science, condensed matter physics, solid-state chemistry, structural biology and the molecular sciences generally, the Springer Handbook of Microscopy is a unified, coherent and pedagogically attractive text for advanced students who need an authoritative yet accessible guide to the science and practice of microscopy.

Author: Jean-Baptiste Donnet
Publisher: Routledge
ISBN: 135146261X
Category : Science
Languages : en
Pages : 484

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The second edition of this reference provides comprehensive examinations of developments in the processing and applications of carbon black, including the use of new analytical tools such as scanning tunnelling microscopy, Fourier transform infrared spectroscopy and inverse gas chromatography.;Completely rewritten and updated by numerous experts in the field to reflect the enormous growth of the field since the publication of the previous edition, Carbon Black: discusses the mechanism of carbon black formation based on recent advances such as the discovery of fullerenes; elucidates micro- and macrostructure morphology and other physical characteristics; outlines the fractal geometry of carbon black as a new approach to characterization; reviews the effect of carbon black on the electrical and thermal conductivity of filled polymers; delineates the applications of carbon black in elastomers, plastics, and zerographic toners; and surveys possible health consequences of exposure to carbon black.;With over 1200 literature citations, tables, and figures, this resource is intended for physical, polymer, surface and colloid chemists; chemical and plastics engineers; spectroscopists; materials scientists; occupational safety and health physicians; and upper-level undergraduate and graduate students in these disciplines.

Author: M. Gentili
Publisher: Springer Science & Business Media
ISBN: 9401582610
Category : Science
Languages : en
Pages : 214

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Success in the fabrication of structures at the nanometer length scale has opened up a new horizon to condensed matter physics: the study of quantum phenomena in confined boxes, wires, rings, etc. A new class of electronic devices based on this physics has been proposed, with the promise of a new functionality for ultrafast and/or ultradense electronic circuits. Such applications demand highly sophisticated fabrication techniques, the crucial one being lithography. Nanolithography contains updated reviews by major experts on the well established techniques -- electron beam lithography (EBL), X-ray lithography (XRL), ion beam lithography (IBL) -- as well as on emergent techniques, such as scanning tunnelling lithography (STL).

Author: M.T. Bray
Publisher: Springer Science & Business Media
ISBN: 1475793227
Category : Technology & Engineering
Languages : en
Pages : 431

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The first U. S. Army Natick Research, Development and Engineering Center Atomic Force/Scanning Tunneling Microscopy (AFM/STM) Symposium was held on lune 8-10, 1993 in Natick, Massachusetts. This book represents the compilation of the papers presented at the meeting. The purpose ofthis symposium was to provide a forum where scientists from a number of diverse fields could interact with one another and exchange ideas. The various topics inc1uded application of AFM/STM in material sciences, polymers, physics, biology and biotechnology, along with recent developments inc1uding new probe microscopies and frontiers in this exciting area. The meeting's format was designed to encourage communication between members of the general scientific community and those individuals who are at the cutting edge of AFM, STM and other probe microscopies. It immediately became clear that this conference enabled interdisciplinary interactions among researchers from academia, industry and government, and set the tone for future collaborations. Expert scientists from diverse scientific areas including physics, chemistry, biology, materials science and electronics were invited to participate in the symposium. The agenda of the meeting was divided into three major sessions. In the first session, Biological Nanostructure, topics ranged from AFM ofDNA to STM imagmg ofthe biomoleeule tubulin and bacterialluciferase to the AFM of starch polymer double helices to AFM imaging of food surfaces.

Author: R.S. Williams
Publisher: Springer Science & Business Media
ISBN: 9401595763
Category : Technology & Engineering
Languages : en
Pages : 367

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energy production, environmental management, transportation, communication, computation, and education. As the twenty-first century unfolds, nanotechnology's impact on the health, wealth, and security of the world's people is expected to be at least as significant as the combined influences in this century of antibiotics, the integrated circuit, and human-made polymers. Dr. Neal Lane, Advisor to the President for Science and Technology and former National Science Foundation (NSF) director, stated at a Congressional hearing in April 1998, "If I were asked for an area of science and engineering that will most likely produce the breakthroughs of tomorrow, I would point to nanoscale science and engineering. " Recognizing this potential, the White House Office of Science and Technology Policy (OSTP) and the Office of Management and Budget (OMB) have issued a joint memorandum to Federal agency heads that identifies nanotechnology as a research priority area for Federal investment in fiscal year 2001. This report charts "Nanotechnology Research Directions," as developed by the Interagency W orking Group on Nano Science, Engineering, and Technology (IWGN) of the National Science and Technology Council (NSTC). The report incorporates the views of leading experts from government, academia, and the private sector. It reflects the consensus reached at an IWGN-sponsored workshop held on January 27-29, 1999, and detailed in contributions submitted thereafter by members of the V. S. science and engineering community. (See Appendix A for a list of contributors.