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Author: R.A. Abram Publisher: Springer Science & Business Media ISBN: 1475707703 Category : Science Languages : en Pages : 383
Book Description
This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.
Author: R.A. Abram Publisher: Springer Science & Business Media ISBN: 1475707703 Category : Science Languages : en Pages : 383
Book Description
This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.
Author: I. M. Tsidilkovski Publisher: Elsevier ISBN: 1483157865 Category : Science Languages : en Pages : 417
Book Description
Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillations, magnetophonon resonance, and magneto-optical phenomena are discussed. Experimental physicists, theoretical physicists, students and research workers, and engineers working in the field of semiconductor electronics will find this book a great source of vital information.
Author: Prasanta Kumar Basu Publisher: Oxford University Press ISBN: 0198526202 Category : Science Languages : en Pages : 470
Book Description
Semiconductor optoelectronic devices are at the heart of all information generation and processing systems and are likely to be essential components of future optical computers. With more emphasis on optoelectronics and photonics in graduate programmes in physics and engineering, there is aneed for a text providing a basic understanding of the important physical phenomena involved. Such a training is necessary for the design, optimization, and search for new materials, devices, and application areas. This book provides a simple quantum mechanical theory of important optical processes,i.e. band-to-band, intersubband, and excitonic absorption and recombination in bulk, quantum wells, wires, dots, superlattices, and strained layers including electro-optic effects. The classical theory of absorption, quantization of radiation, and band picture based on k.p perturbation has beenincluded to provide the necessary background. Prerequisites for the book are a knowledge of quantum mechanics and solid state theory. Problems have been set at the end of each chapter, some of which may guide the reader to study processes not covered in the book. The application areas of thephenomena are also indicated.
Author: Hans D. Hochheimer Publisher: Springer Science & Business Media ISBN: 1489924809 Category : Science Languages : en Pages : 481
Book Description
The role of high pressure experiments in the discovery of supercon ducting materials with a T. above liquid nitrogen temperature has demon strated the importance of such experiments. The same role holds true in the tailoring of materials for optoelectronic devices. In addition, much progress has been made recently in the search for metallic hydro gen, and the application of high pressure in polymer research has brought forth interesting results. These facts together with the suc cess of previous small size meetings (such as the "First International Conference on the Physics of Solids at High Pressure", held in 1965 in Tucson, Arizona, U. S. A. ; "High Pressure and Low Temperature Physics", held in 1977 in Cleveland, Ohio, U. S. A. ; and "Physics of Solids Under High Pressure", held in 1981 in bad Honnef, Germany), motivated us to organize a workshop with emphasis on the newest results and trends in these fields of high pressure research. Furthermore, it was intended to mix experienced and young scien tists to realize an idea best expressed in a letter by Prof. Weinstein: "I think it is an excellent idea. I have often felt that the number of excellent young researchers in the high pressure field need an opportu nity to put forward their work with due recognition. " Thanks to the support of the key speakers, we were able to achieve this goal and had more than 50\ young participants.
Author: D.J. Lockwood Publisher: Springer ISBN: 1489936955 Category : Science Languages : en Pages : 592
Book Description
Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.
Author: T.C. McGill Publisher: Springer Science & Business Media ISBN: 146845661X Category : Science Languages : en Pages : 338
Book Description
This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.
Author: A. Stella Publisher: Elsevier ISBN: 1483290360 Category : Science Languages : en Pages : 496
Book Description
This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds.
Author: M. J. Kelly Publisher: Clarendon Press ISBN: 0191590096 Category : Science Languages : en Pages : 569
Book Description
This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices. It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the multilayer structures. The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom. The book should appeal equally to physicists, electronic engineers and materials scientists.
Author: Publisher: Academic Press ISBN: 9780080865089 Category : Science Languages : en Pages : 454
Book Description
The explosion of the science of mesoscopic structures is having a great impact on physics and electrical engineering because of the possible applications of these structures in microelectronic and optoelectronic devices of the future. This volume of Solid State Physics consists of two comprehensive and authoritative articles that discuss most of the physical problems that have so far been identified as being of importance in semiconductor nanostructures. Much of the volume is tutorial in characture--while at the same time time presenting current and vital theoretical and experimental results and a copious reference list--so it will be essential reading to all those taking a part in the research and development of this emerging technology.
Author: R.A. Abram
Author: R.A. Abram
Author: I. M. Tsidilkovski
Author: Gerhard Fasol
Author: Prasanta Kumar Basu
Author: Hans D. Hochheimer
Author: D.J. Lockwood
Author: T.C. McGill
Author: A. Stella
Author: M. J. Kelly
Author: