Automatic Measurement of Network Parameters PDF Download

Author: Robert William Beatty
Publisher:
ISBN:
Category : Electric measurements
Languages : en
Pages : 116

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Author:
Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 800

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Author: United States. National Bureau of Standards
Publisher:
ISBN:
Category :
Languages : en
Pages : 788

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Author:
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1194

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Author: United States. Congress. House. Committee on Appropriations. Subcommittee on the Departments of Commerce, Justice, and State, the Judiciary, and Related Agencies
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 884

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Author: United States. Congress. House. Committee on Appropriations. Subcommittee on the Departments of Commerce, Justice, and State, the Judiciary, and Related Agencies
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 786

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Author: George J. Rogers
Publisher:
ISBN:
Category : Electronic measurements
Languages : en
Pages : 60

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Author: David E. Root
Publisher: Cambridge University Press
ISBN: 1107511569
Category : Technology & Engineering
Languages : en
Pages : 237

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Book Description
This is the definitive guide to X-parameters, written by the original inventors and developers of this powerful new paradigm for nonlinear RF and microwave components and systems. Learn how to use X-parameters to overcome intricate problems in nonlinear RF and microwave engineering. The general theory behind X-parameters is carefully and intuitively introduced, and then simplified down to specific, practical cases, providing you with useful approximations that will greatly reduce the complexity of measuring, modeling and designing for nonlinear regimes of operation. Containing real-world case studies, definitions of standard symbols and notation, detailed derivations within the appendices, and exercises with solutions, this is the definitive stand-alone reference for researchers, engineers, scientists and students looking to remain on the cutting-edge of RF and microwave engineering.

Author: Shun-Feng Su
Publisher: Springer Nature
ISBN: 9811620784
Category : Technology & Engineering
Languages : en
Pages : 113

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Book Description
This journal-like book series includes edited volumes to rapidly report and spread the latest technological results, new scientific discovery and valuable applied researches in the fields concerning offshore robotics as well as promote international academic exchange. We aim to make it one of the premier comprehensive academic publications of world offshore vehicle and robotics community. The audience of the series will include the scholars, researchers, engineers and students who are interested in fields of autonomous marine vehicles and robotics, including autonomous surface vehicles, autonomous underwater vehicles, remote operation vehicles, marine bionics, marine vehicle modeling, guidance, navigation, control and cooperation and so on.

Author: Gunter Kompa
Publisher: Artech House
ISBN: 1630817457
Category : Technology & Engineering
Languages : en
Pages : 609

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Book Description
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.