Author: Gustaaf van Tendeloo Publisher: John Wiley & Sons ISBN: 3527641874 Category : Technology & Engineering Languages : en Pages : 1484
Book Description
This completely revised successor to the Handbook of Microscopy supplies in-depth coverage of all imaging technologies from the optical to the electron and scanning techniques. Adopting a twofold approach, the book firstly presents the various technologies as such, before going on to cover the materials class by class, analyzing how the different imaging methods can be successfully applied. It covers the latest developments in techniques, such as in-situ TEM, 3D imaging in TEM and SEM, as well as a broad range of material types, including metals, alloys, ceramics, polymers, semiconductors, minerals, quasicrystals, amorphous solids, among others. The volumes are divided between methods and applications, making this both a reliable reference and handbook for chemists, physicists, biologists, materials scientists and engineers, as well as graduate students and their lecturers.
Author: M. Page Publisher: ISBN: Category : Languages : en Pages : 5
Book Description
The atomic structure and electronic properties of crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) interfaces in silicon heterojunction (SHJ) solar cells are investigated by high-resolution transmission electron microscopy, atomic-resolution Z-contrast imaging, and electron energy loss spectroscopy. We find that all high-performance SHJ solar cells exhibit atomically abrupt and flat c-Si/a-Si:H interfaces and high disorder of the a-Si:H layers. These atomically abrupt and flat c-Si/a-Si:H interfaces can be realized by direct deposition of a-Si:H on c-Si substrates at a substrate temperature below 150 deg C by hot-wire chemical vapor deposition from pure silane.
Author: B.E. Deal Publisher: Springer Science & Business Media ISBN: 1489907742 Category : Science Languages : en Pages : 543
Book Description
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Author: Shigemi Terakawa Publisher: Springer Nature ISBN: 9811968721 Category : Technology & Engineering Languages : en Pages : 83
Book Description
This book reports the establishment of a single-atomic layer metal of In and a novel (In, Mg) ultrathin film on Si(111) surfaces. A double-layer phase of In called “rect” has been extensively investigated as a two-dimensional metal. Another crystalline phase called “hex” was also suggested, but it had not been established due to difficulty in preparing the sample. The author succeeded in growing the large and high-quality sample of the hex phase and revealed that it is a single-layer metal. The author also established a new triple-atomic layer (In, Mg) film with a nearly freestanding character by Mg deposition onto the In double layer. This work proposes a novel method to decouple ultrathin metal films from Si dangling bonds. The present study demonstrates interesting properties of indium itself, which is a p-block metal both with metallicity and covalency. In this book, readers also see principles of various surface analysis techniques and learn how to use them and analyze the results in the real systems. This book is useful to researchers and students interested in surface science, particularly ultrathin metal films on semiconductor surfaces.
Author: A. Borghesi Publisher: North Holland ISBN: Category : Science Languages : en Pages : 624
Book Description
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Author: John Singleton Publisher: ISBN: 0198506449 Category : Science Languages : en Pages : 239
Book Description
This textbook attempts to reveal in a quantitative and fairly rigorous fashion how band theory leads to the everyday properties of materials.
Author: Winfried Mönch Publisher: Springer Science & Business Media ISBN: 3662069458 Category : Technology & Engineering Languages : en Pages : 269
Book Description
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Author: E. Kasper Publisher: CRC Press ISBN: 1351093525 Category : Technology & Engineering Languages : en Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: Donald L. Wise Publisher: CRC Press ISBN: 148226997X Category : Technology & Engineering Languages : en Pages : 965
Book Description
"Furnishes the necessary background information, methods of characterization, and applications of optic and photonic systems based on polymers. Provides detailed tutorial chapters that offer in-depth explanations of optic and photonic fundamentals and synthesis techniques."
Author: M A Laughton Publisher: Elsevier ISBN: 1483102637 Category : Technology & Engineering Languages : en Pages : 993
Book Description
Electrical Engineer's Reference Book, Fourteenth Edition focuses on electrical engineering. The book first discusses units, mathematics, and physical quantities, including the international unit system, physical properties, and electricity. The text also looks at network and control systems analysis. The book examines materials used in electrical engineering. Topics include conducting materials, superconductors, silicon, insulating materials, electrical steels, and soft irons and relay steels. The text underscores electrical metrology and instrumentation, steam-generating plants, turbines and diesel plants, and nuclear reactor plants. The book also discusses alternative energy sources. Concerns include wind, geothermal, wave, ocean thermal, solar, and tidal energy. The text then looks at alternating-current generators. Stator windings, insulation, output equation, armature reaction, and reactants and time-constraints are described. The book also examines overhead lines, cables, power transformers, switchgears and protection, supply and control of reactive power, and power systems operation and control. The text is a vital source of reference for readers interested in electrical engineering.
Author: Gustaaf van Tendeloo
Author: M. Page
Author: B.E. Deal
Author: Shigemi Terakawa
Author: A. Borghesi
Author: John Singleton
Author: Winfried Mönch
Author: E. Kasper
Author: Donald L. Wise
Author: M A Laughton