Atomic Scale Imaging and Characterization of Electronic Defect States in Dielectric Thin Film Materials Using Dynamic Tunneling Force Microscopy PDF Download

Author: Ruiyao Wang
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 79

View

Book Description

Author: Klaus D. Sattler
Publisher: CRC Press
ISBN: 1466505109
Category : Science
Languages : en
Pages : 754

View

Book Description
Ushering in the next technological era, this state-of-the-art book focuses on the instrumentation and experiments emerging at the picometer scale. International scientists and researchers at the forefront of the field address the key challenges in developing new instrumentation and techniques to visualize and measure structures at this sub-nanometer level. The book helps you understand how picoscience is an extension of nanoscience, determine which experimental technique to use in your research, and connect basic studies to the development of next-generation picoelectronic devices.

Author: Mikhail Baklanov
Publisher: John Wiley & Sons
ISBN: 0470065419
Category : Technology & Engineering
Languages : en
Pages : 508

View

Book Description
The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.

Author: Cecile Semana Bonifacio
Publisher:
ISBN: 9781303442186
Category :
Languages : en
Pages :

View

Book Description
Dielectric breakdown (BD) is the loss of capacitance upheld by an insulating material through defect formation and charge trapping. Dielectric BD is well-studied in the framework of reliability physics for semiconductor applications, and presents itself as a viable mechanism during materials processing by electric field assisted sintering (EFAS). So far a mechanistic understanding of dielectric BD is incomplete due to the limitations in nanoscale defect characterization techniques. The recent development of novel in situ transmission electron microscopy (TEM) capabilities enables the atomic-scale characterization of dielectric BD mechanisms, which was the subject of this dissertation.As the technology of semiconductor devices moves toward the sub-25 nm technology the electronic properties of gate oxide layers are affected eventually leading to device failure by dielectric BD. This study aimed to provide a systematic approach of simultaneous imaging and local application of electrical stress using in situ TEM by contacting an electrically biased Scanning Tunnelling Microscopy (STM) probe directly to the TEM sample. This experimental setup therefore allows a correlation of electrical signatures with defect structure evolution. In situ TEM experiments carried out with a single SiO2-based field effect transistor resulted to catastrophic failure of the dielectric layer consistent with descriptions of soft dielectric breakdown (SBD) and hard dielectric breakdown (HBD).A variety of in situ TEM techniques was further utilized to investigate whether electric field induced dielectric breakdown may contribute to densification of metallic powder particles during EFAS. in situ heating and STM-TEM experiments were systematically applied to separately study thermal and athermal effects during densification, respectively. Nanometric metal powders used for sintering typically possess surface oxides that affect the thermodynamics and kinetics of neck formation during the initial stage of sintering. The thermal effects were found to be driven by reduction-oxidation reactions of nickel oxide with carbon. The presence of carbon promotes the removal of surface oxides at lower temperatures and, therefore, can accelerate densification. By the controlled application of electrical bias, EFAS conditions were reproduced during in situ TEM and revealed reduction of ultra-thin nickel oxide surface layers by electric field-induced dielectric breakdown. The results provide evidence for previously suggested effects of local electric field amplification at inter-particle contact areas, which, hence, triggers surface cleaning through electric field-induced dielectric breakdown.

Author: Umberto Celano
Publisher: Springer
ISBN: 3030156125
Category : Science
Languages : en
Pages : 408

View

Book Description
The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer control of the many parameters essential for their fabrication. Through the years, this created a strong alliance between microscopy techniques and IC manufacturing. This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development. The operation principles of many techniques are introduced, and the associated metrology challenges described. Blending the expertise of industrial specialists and academic researchers, the chapters are dedicated to various AFM methods and their impact on the development of emerging nanoelectronic devices. The goal is to introduce the major electrical AFM methods, following the journey that has seen our lives changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.

Author: Jill Guyonnet
Publisher: Springer Science & Business Media
ISBN: 3319057502
Category : Science
Languages : en
Pages : 167

View

Book Description
Using the nano metric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nano scale interfaces separating regions of differently oriented spontaneous polarization. Due to the local symmetry-breaking caused by the change in polarization, domain walls are found to possess an unexpected lateral piezoelectric response, even when this is symmetry-forbidden in the parent material. This has interesting potential applications in electromechanical devices based on ferroelectric domain patterning. Moreover, electrical conduction is shown to arise at domain walls in otherwise insulating lead zirconate titanate, the first such observation outside of multiferroic bismuth ferrite, due to the tendency of the walls to localize defects. The role of defects is then explored in the theoretical framework of disordered elastic interfaces possessing a characteristic roughness scaling and complex dynamic response. It is shown that the heterogeneous disorder landscape in ferroelectric thin films leads to a breakdown of the usual self-affine roughness, possibly related to strong pinning at individual defects. Finally, the roles of varying environmental conditions and defect densities in domain switching are explored and shown to be adequately modelled as a competition between screening effects and pinning.

Author: Jeffery Andrew Aguiar
Publisher:
ISBN: 9781267656339
Category :
Languages : en
Pages :

View

Book Description
Coupling the development of emerging experimental techniques in STEM and EELS with a fundamental understanding of atomic electronic structure afforded by DFT represents the unique approach and intention of this thesis. Scanning transmission electron microscopes equipped with high-angle annular dark field (HAADF) detectors and Gatan image filters (GIF) provide images and spectra, where the image brightness is interpreted as a function of atomic mass and thickness, and elemental specific spectra provide a means for the exploration of electronic and chemical structure of materials at the angstrom size scale. Over the past 20 years, the application of EELS in STEM has enabled more accurate elemental identification and exploration of electronic and chemical structure on angstrom-length scales, and arguably has provided an unprecedented wealth of materials characterization compared to other available techniques. Many materials issues related to specific novel properties that cannot be analyzed using the traditional techniques of the past, however, still remain unanswered. These concepts require a married approach of experiment and theory to fully explain. The intent of this dissertation is the development of improved analysis techniques that derive quantitative atomic scale information in connection with unraveling the origins of materials properties linked to the electronic structure and chemistry of materials.

Author: Ze Zhang
Publisher:
ISBN:
Category : Electron microscopy
Languages : en
Pages : 0

View

Book Description
Seeing is believing. The ability to directly visualize things greatly deepens people's knowledge and advances researches in many fields. Apart from resolving tiny things, optical imaging can also provide spectroscopy information which offers fundamental insights into the energy states of matter. As research develops at the nanoscale, these energy states are often a↵ected by nanostructuring and local defects of the sample. An imaging tool that can provide optical information with nanometerscale spatial resolution will o↵er fundamental insights, greatly enhance our ability to design novel materials, and advance research in a wealth of areas, including but not limited to optoelectronics, quantum materials, defect engineering, surface catalysis, and molecular biology.Many optical spectroscopy and imaging techniques like Raman, photoluminescence, and infrared spectroscopy are widely used for materials characterization. Visible photons have energies (meV to eV) match with those of the energy states inside the material and thus process excellent spectral selectivity. However, the spatial resolution of traditional optical techniques is diffraction-limited by the wavelength of light used, which is hundreds of nanometers to microns. Although various techniques such scanning probe techniques in the near field and super-resolution techniques in the far-field have been developed to overcome this di↵raction limit and reached ⇠10 nm resolution, these techniques require fluorescent labels or a sharp scanning tip, which limits their application.On the other hand, modern scanning or transmission electron microscopes (SEM or TEM) can readily achieve nanometer and angstrom spatial resolution using 1-300 keV high-energy electrons. However, the energy mismatch between such high-energy electrons and the energy states inside the sample makes high spectral resolution challenging for electron microscopes. Only very recently can some state-of-the-art electron monochromator achieve meV energy resolution, but this requires expensive and specialized instruments. Nanometer and atomic resolution label-free imaging with v optical information has remained a major scientific challenge.In the work presented in this thesis, we developed a new imaging technique named PhotoAbsorption Microscopy using ELectron Analysis (PAMELA). PAMELA combines the high spectral selectivity of photoexcitation and the high spatial resolution of electron microscopes to o↵er nanometer-scale imaging with optical information. We implement PAMELA on two platforms, an SEM and a TEM, to demonstrate optical imaging first below the optical di↵raction limit and eventually at the atomic scale resolution.For PAMELA-SEM, we experimentally demonstrate spectrally specific photoabsorption imaging with sub-20 nanometer spatial resolution using various semiconductor and metal nanoparticles. The photoabsorption-induced contrast mechanism is attributed to surface photovoltage which modulates the secondary electron emission. Theoretical analysis and Monte Carlo simulations are performed to explain the trends of the signal observed.For PAMELA-TEM, we discuss the possibility of imaging photoexcited states with atomic-scale resolution. We design an experimental set-up based on high-resolution TEM (HRTEM) and use ab initio together with HRTEM simulations to calculate the imaging conditions required for a few model systems, including defects in hexagonal boron nitride (h-BN) and core-shell quantum dots.PAMELA techniques are based on photoabsorption which is the first and fundamental step in lightmatter interactions: every atom or molecule absorbs photons but only a few fluoresce. Photoabsorption contains rich information about the electronic structure and vibrational and rotational modes of materials. We believe PAMELA will o↵er new opportunities for nanometer-scale optical spectroscopic imaging and material characterization.

Author: Yajun Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 682

View

Book Description

Author: David G. Rickerby
Publisher: Springer Science & Business Media
ISBN: 9780792359395
Category : Science
Languages : en
Pages : 522

View

Book Description
This book presents a coherent synopsis of a rapidly evolving field. Subjects covered include diffraction contrast and defect analysis by conventional TEM lattice imaging, phase contrast and resolution limits in high resolution electron microscopy. Specialised electron diffraction techniques are also covered, as is the application of parallel electron energy loss spectroscopy and scanning transmission EM for subnanometer analysis. Materials analyzed include thin films, interfaces and non-conventional materials. WDS and EDS are treated, with an emphasis on phi(rhoZeta) techniques for the analysis of thin layers and surface films. Theoretical and practical aspects of ESEM are discussed in relation to applications in crystal growth, biomaterials and polymers. Recent developments in SPM are also described. A comprehensive survey of the state of the art in electron and SPM, future research directions and prospective applications in materials engineering.