Author: Jared Michael Johnson
Publisher:
ISBN:
Category : Electron microscopy
Languages : en
Pages : 150

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Book Description
Precisely controlled point defects are vital to the manipulation of important electronic properties in semiconductor materials. Point defects and their complexes display a wide range of atomic structures and functional states that critically influence a semiconductor’s unique properties. Therefore, gaining insight on the exact nature of their formation and role in determining properties is key to advancing these materials for application. This type of characterization requires obtaining experimental information on the atomic scale structure of point defects.

Author: Muad Saleh
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 312

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Book Description
Defects are what make most optical and semiconductor materials interesting, versatile in their behavior, and useable in different applications. Defects at the level of one atom in 106 to 109 atoms of the host material can have a significant influence on the electrical and optical properties, and depending on the identity of the defect and the site it is occupying, they can either enhance, degrade, or have no effect on the properties. Thus, it is crucial to characterize and understand the role of various dopants/defects on the properties and performance optical and semiconductor materials, and the defect/dopant formation, incorporation, and variation. This dissertation examines the influence of dopants and defects in ZnS, [beta]-Ga2O3 and Nd:YAG. Finally, the implementation of the accelerated crucible rotation technique (ACRT) is described to modify the Nd concentration profile in YAG grown by Czochralski (CZ). ZnS is a well-known scintillator used mainly in the powder forms; this study examines using bulk ZnS as a scintillator by modeling. The study also evaluates bulk ZnS single crystals by photoluminescence (PL), PL excitation, optical absorption, radioluminescence, and thermoluminescence and shows that samples show diverse luminescence behavior that can be attributed to the differences between samples' impurity concentrations. Study of the bulk ZnS by optical deep level transient spectroscopy (ODLTS), photoinduced current transient spectroscopy (PICTS), and photoconductivity shows the applicability of ODLTS/PICTS in studying ZnS, and show peculiar optically induced electrical behavior that is caused by a combination of point and extended defects. [beta]-Ga2O3 is an ultra-wide bandgap transparent semiconducting oxide of interest for high breakdown voltage electronics. This study evaluates parameters that affect the Czochralski (CZ) growth of [beta]-Ga2O3, and introduces two new shallow donors, Zr and Hf; these dopants show potentially superior electrical properties over other donors, such as Si and Sn, in [beta]-Ga2O3 and the ability to degenerately dope [beta]-Ga2O3. Finally, Nd:YAG is an important laser material that suffers from dopant segregation. In this study, we use ACRT to modify the Nd radial and vertical concentration profile during the CZ growth of Nd:YAG and enable enhanced incorporation of Nd, better homogeneity, and lower stresses.

Author: Manuel Siegl
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description

Author: Masataka Higashiwaki
Publisher: Springer Nature
ISBN: 3030371530
Category : Technology & Engineering
Languages : en
Pages : 768

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Book Description
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

Author: Stephen Pearton
Publisher: Elsevier
ISBN: 0128145226
Category : Technology & Engineering
Languages : en
Pages : 507

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Book Description
Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact

Author: Meiyong Liao
Publisher: Elsevier
ISBN: 0128172568
Category : Technology & Engineering
Languages : en
Pages : 503

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Book Description
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Author: Joseph Woicik
Publisher: Springer
ISBN: 3319240439
Category : Science
Languages : en
Pages : 576

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Book Description
This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.

Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266

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Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Author: Yuji Zhao
Publisher: Elsevier
ISBN: 0128228709
Category : Science
Languages : en
Pages : 480

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Book Description
Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials

Author: Antonio Facchetti
Publisher: John Wiley & Sons
ISBN: 9780470710593
Category : Technology & Engineering
Languages : en
Pages : 470

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Book Description
The challenge for producing “invisible” electronic circuitry and opto-electronic devices is that the transistor materials must be transparent to visible light yet have good carrier mobilities. This requires a special class of materials having “contra-indicated properties” because from the band structure point of view, the combination of transparency and conductivity is contradictory. Structured to strike a balance between introductory and advanced topics, this monograph juxtaposes fundamental science and technology / application issues, and essential materials characteristics versus device architecture and practical applications. The first section is devoted to fundamental materials compositions and their properties, including transparent conducting oxides, transparent oxide semiconductors, p-type wide-band-gap semiconductors, and single-wall carbon nanotubes. The second section deals with transparent electronic devices including thin-film transistors, photovoltaic cells, integrated electronic circuits, displays, sensors, solar cells, and electro-optic devices. Describing scientific fundamentals and recent breakthroughs such as the first “invisible” transistor, Transparent Electronics: From Synthesis to Applications brings together world renowned experts from both academia, national laboratories, and industry.