Asymptotic Analysis of Melt Growth for Antimonide-Based Compound Semiconductor Crystals in Magnetic and Electric Fields PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages : 4
Book Description
Single crystals of doped and alloyed antimonide-based semiconductors are needed for Air Force Applications because they serve as transparent, lattice-matched epitaxial growth templates for detectors. High-performance devices rely on good compositional homogeneity in the bulk substrate which is cut from wafers sliced from the crystal. Several important processes are being developed at AFRL in Hanscom AFB, which are the vertical gradient freezing process using submerged heater growth, the vertical Bridgman process using submerged heater growth, and the magnetic liquid- encapsulated Czochralski process. Because molten semiconductors are excellent electrical conductors, these processes apply magnetic and electric fields to control the melt motion and thus the convective transport of species during growth in order to optimize the properties of the crystal. Asymptotic and numerical modelling of these processes have provided predictions of the transport in the melt and of the compositional distribution in the crystal.
Author: Publisher: ISBN: Category : Languages : en Pages : 4
Book Description
Single crystals of doped and alloyed antimonide-based semiconductors are needed for Air Force Applications because they serve as transparent, lattice-matched epitaxial growth templates for detectors. High-performance devices rely on good compositional homogeneity in the bulk substrate which is cut from wafers sliced from the crystal. Several important processes are being developed at AFRL in Hanscom AFB, which are the vertical gradient freezing process using submerged heater growth, the vertical Bridgman process using submerged heater growth, and the magnetic liquid- encapsulated Czochralski process. Because molten semiconductors are excellent electrical conductors, these processes apply magnetic and electric fields to control the melt motion and thus the convective transport of species during growth in order to optimize the properties of the crystal. Asymptotic and numerical modelling of these processes have provided predictions of the transport in the melt and of the compositional distribution in the crystal.
Author: Publisher: ISBN: Category : Heat Languages : en Pages : 996
Book Description
This journal is devoted to the advancement of the science and technology of thermophysics and heat transfer through the dissemination of original research papers disclosing new technical knowledge and exploratory developments and applications based on new knowledge. It publishes papers that deal with the properties and mechanisms involved in thermal energy transfer and storage in gases, liquids, and solids or combinations thereof. These studies include conductive, convective, and radiative modes alone or in combination and the effects of the environment.
Author: Golla Eranna Publisher: CRC Press ISBN: 1482232812 Category : Science Languages : en Pages : 432
Book Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Author: Publisher: ISBN: Category : Engineering Languages : en Pages : 2264
Book Description
Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Author: Publisher: Elsevier ISBN: 0080965148 Category : Science Languages : en Pages : 292
Book Description
Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. - Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT - Review of the CdTe recent developments - Fundamental background of many topics clearly introduced and exposed
Author: T. F. Connolly Publisher: Springer Science & Business Media ISBN: 1475706987 Category : Science Languages : en Pages : 692
Book Description
This volume is a joint effort of the Research Materials Information Center (RMIC) of the Solid State Division at Oak Ridge National Laboratory and the Libraries and Information Systems Center at Bell Telephone Laboratories (BTL) Murray Hill, N. J. The Research Materials Information Center has, since 1963, been answering inquiries on the avail ability, preparation, and properties of inorganic solid-state research materials. The preparation of bibliographies has been essential to this function, and the interest in ferroelectrics led to the compila tion of the journal and report literature on that subject. The 1962 book Ferroelectric Crystals, by Jona and Shirane, was taken as a cutoff point, and all papers through mid-1969 received by the Center have been included. The Libraries and Information Systems Center of BTL has, over a period of years, developed a proprie tary package of computer programs called BELDEX, which formats and generates indexes to biblio graphic material. This group therefore undertook to process RMIC's ferroelectric references by BELDEX so that both laboratories could have the benefit of an indexed basic bibliography in this important research area.
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Author: T. F. Connolly
Author: American Ceramic Society