Author: Milan DiebelPublisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 183
Book Description
Application of Ab-initio Calculations to Modeling of Nanoscale Diffusion and Activation in Silicon
Author: Milan DiebelPublisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 183
Book Description
Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 868
Book Description
Ab Initio Molecular Dynamics Simulation of Diffusion in Silicon
Author: Beat SahliPublisher:
ISBN: 9783866281332
Category : Molecular dynamics
Languages : en
Pages : 189
Book Description
Ab Initio Calculations of As-vacancy Interactions in Silicon
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 11
Book Description
Atomistic simulation of a vacancy-assisted dopant diffusion in silicon needs details of the dopant-vacancy interaction, i.e., the potential as a functional of dopant-vacancy separations. In this paper, the authors present a detailed study on the energetics of As-vacancy reaction in silicon and the lattice distortions surrounding the As-vacancy defect by using an ab initio plane wave pseudopotential method and the density functional theory (DFT). A potential-energy diagram as a function of As-vacancy separation is provided, which can be used in the atomistic diffusion simulations. The authors also calculate the binding energy and the formation energy of different complexes such as AsV, As2V and AsV2 (V represents vacancy). They find that the stable configuration of As2V is As-V-As, while the stable configuration of AsV2 is As-V-V. The nature of the binding between As and vacancy is explained from the lattice distortions and the change of chemical bond configuration introduced by the As-vacancy complex.
Ab Initio Calculations
Author: Petr ČárskýPublisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 264
Book Description
Until recently quantum chemical ab initio calculations were re stricted to atoms and very small molecules. As late as in 1960 Allen l and Karo stated : "Almost all of our ab initio experience derives from diatomic LCAO calculations ••• N and we have found in the litera ture "approximately eighty calculations, three-fourths of which are for diatomic molecules ••• There are approximately twenty ab initio calculations for molecules with more than two atoms, but there is a decided dividing line between the existing diatomic and polyatomic wave functions. Confidence in the satisfactory evaluation of the many -center two-electron integrals is very much less than for the diatom ic case". Among the noted twenty calculations, SiH was the largest 4 molecule treated. In most cases a minimal basis set was used and the many-center two-electron integrals were calculated in an approximate way. Under these circumstances the ab initio calculations could hard ly provide useful chemical information. It is therefore no wonder that the dominating role in the field of chemical applications was played by semiempirical and empirical methods. The situation changed essentially in the next decade. The problem of many-center integrals was solved, efficient and sophisticated computer programs were devel oped, basis sets suitable for a given type of problem were suggested, and, meanwhile, a considerable amount of results has been accumulated which serve as a valuable comparative material. The progress was of course inseparable from the development and availability of computers.
Simulation of Semiconductor Processes and Devices 2004
Author: Gerhard WachutkaPublisher: Springer Science & Business Media
ISBN: 3709106249
Category : Technology & Engineering
Languages : en
Pages : 387
Book Description
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
International Conference on Simulation of Semiconductor Processes and Devices
Author: 2001 International Conference on Computational Nanoscience
Author: Matthew LaudonPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 226
Book Description
The worlds most comprehensive and up-to-date collection of Multidisciplinary Micro and Nano technical papers. Technical Proceedings of the 2001 International Conference on Computational Nano Science and Nano Technology. Computational Biology and Molecular Design, Bioinformatics and Mathematical Biology, Polymers and Colloids, Molecules and Molecular Materials, Atomistic and Nanoscale Modeling, Computational Materials, Nanoscale Theory and Methods, . Papers taken from the 2001 MSM, Hilton Head Island, USA, March. 2001.
Silicon Front-end Junction Formation Technologies
Author: Daniel F. DowneyPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 336
Book Description
Unlike the previous three volumes in the series on silicon front-end processing, this volume expands its focus to include more topics related to formation of ultrashallow junctions. With the challenges presented by the requirements of the sub- 100nm node, the need for new activation technologies which yield minimal diffusion of the dopant while producing high activation are paramount. In addition, the metrology required to measure these shallow profiles in both one and two dimensions becomes more critical. The volume attempts to address these new requirements and potential solutions by covering a variety of topics that include: alternate annealing technologies; device engineering options; dopant activation; epitaxial techniques primarily employing SiGe; defect and diffusion models; characterization using surface analysis techniques; and characterization technologies.
Noise in Nanoscale Semiconductor Devices
Author: Tibor GrasserPublisher: Springer Nature
ISBN: 3030375005
Category : Technology & Engineering
Languages : en
Pages : 724
Book Description
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.