Antimonide-Based Long-Wavelength Lasers on GaAs Substrates PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages : 9
Book Description
We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3 [mu]m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34 [mu]m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275 [mu]m with a room-temperature threshold current density as low as 535 A/cm2. Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17 [mu]m have been obtained with room-temperature threshold current densities of 120 A/cm2, and devices operating at 1.29 [mu]m have displayed thresholds as low as 375 A/cm2. Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.
Author: Publisher: ISBN: Category : Languages : en Pages : 9
Book Description
We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3 [mu]m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34 [mu]m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275 [mu]m with a room-temperature threshold current density as low as 535 A/cm2. Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17 [mu]m have been obtained with room-temperature threshold current densities of 120 A/cm2, and devices operating at 1.29 [mu]m have displayed thresholds as low as 375 A/cm2. Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.
Author: A. G. Baca Publisher: The Electrochemical Society ISBN: 9781566772853 Category : Technology & Engineering Languages : en Pages : 230
Book Description
The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR
Author: M. O. Manasreh Publisher: CRC Press ISBN: 1000717488 Category : Technology & Engineering Languages : en Pages : 523
Book Description
Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters, switches, nonlinear optics, and field-defect transistors. This volume, featuring contributions from leading researchers in the field, is the first book to focus on antimonide-related topics. It offers to both the beginning student and the advanced researcher a comprehensive review of the state of the art in this exciting new area of research.
Author: Hong K. Choi Publisher: John Wiley & Sons ISBN: 9780471392002 Category : Science Languages : en Pages : 418
Book Description
Long-wavelength Infrared Semiconductor Lasers provides a comprehensive review of the current status of semiconductor coherent sources emitting in the mid-to far-infrared spectrum and their applications. It includes three topics not covered in any previous book: far-infrared emission from photo-mixers as well as from hot-hole lasers, and InP-based lasers emitting beyond two micrometers. Semiconductor lasers emitting at more than two micrometers have many applications such as in trace gas analysis, environmental monitoring, and industrial process control. Because of very rapid progress in recent years, until this book no comprehensive information beyond scattered journal articles is available at present.
Author: Pradeep Kumar Gupta Publisher: Springer ISBN: 8132220005 Category : Science Languages : en Pages : 352
Book Description
The book, ‘Laser Physics and Technology’, addresses fundamentals of laser physics, representative laser systems and techniques, and some important applications of lasers. The present volume is a collection of articles based on some of the lectures delivered at the School on ‘Laser Physics and Technology’ organized at Raja Ramanna Centre for Advanced Technology during March, 12-30, 2012. The objective of the School was to provide an in-depth knowledge of the important aspects of laser physics and technology to doctoral students and young researchers and motivate them for further work in this area. In keeping with this objective, the fourteen chapters, written by leading Indian experts, based on the lectures delivered by them at the School, provide along with class room type coverage of the fundamentals of the field, a brief review of the current status of the field. The book will be useful for doctoral students and young scientists who are embarking on a research in this area as well as to professionals who would be interested in knowing the current state of the field particularly in Indian context.
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Author: 
Author: A. G. Baca
Author: M. O. Manasreh
Author: 
Author: Gyoungwon Park
Author: Christopher L. Chua
Author: 陳威呈
Author: Electrochemical Society. Meeting
Author: Hong K. Choi
Author: Pradeep Kumar Gupta