Antimonide-Based Compound Semiconductors for Quantum Computing PDF Download

Author: Borzoyeh Shojaei
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 4

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Book Description
Single crystals of doped and alloyed antimonide-based semiconductors are needed for Air Force Applications because they serve as transparent, lattice-matched epitaxial growth templates for detectors. High-performance devices rely on good compositional homogeneity in the bulk substrate which is cut from wafers sliced from the crystal. Several important processes are being developed at AFRL in Hanscom AFB, which are the vertical gradient freezing process using submerged heater growth, the vertical Bridgman process using submerged heater growth, and the magnetic liquid- encapsulated Czochralski process. Because molten semiconductors are excellent electrical conductors, these processes apply magnetic and electric fields to control the melt motion and thus the convective transport of species during growth in order to optimize the properties of the crystal. Asymptotic and numerical modelling of these processes have provided predictions of the transport in the melt and of the compositional distribution in the crystal.

Author: J.C. Woo
Publisher: CRC Press
ISBN: 9780750310178
Category : Science
Languages : en
Pages : 548

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Book Description
Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of 'International Symposium on Gallium Arsenide and related Compounds'. These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering.

Author: United States. Congress. House. Committee on Armed Services. Subcommittee on Military Research and Development
Publisher:
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Category : Military research
Languages : en
Pages : 648

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Author: United States. Congress. Senate. Committee on Armed Services. Subcommittee on Emerging Threats and Capabilities
Publisher:
ISBN:
Category : Political Science
Languages : en
Pages : 144

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Author: Y Arakawa
Publisher: CRC Press
ISBN: 1482268981
Category : Science
Languages : en
Pages : 888

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Book Description
An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical

Author:
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 704

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Author:
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Category : Compound semiconductors
Languages : en
Pages : 744

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Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 446

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This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Author:
Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572

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Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts