Author: Cecil Tzechor HoPublisher:
ISBN:
Category :
Languages : en
Pages : 76
Book Description
An Investigation of Metal- Oxide-semiconductor Capacitors
Author: Richard Albert StromPublisher:
ISBN:
Category : Capacitors
Languages : en
Pages : 142
Book Description
Further Investigation of the Large Signal Behavior of Metal Oxide Semiconductor Capacitors
Author: Cecil Tzechor HoExperimental Study of Metal-oxide-semiconductor Capacitors
Author: Karl Harry ZainingerPublisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 312
Book Description
A Study of Metal Oxide Semiconductor Capacitors when Subjected to Illumination
Author: Ellidus Anno Allan HaanPublisher:
ISBN:
Category :
Languages : en
Pages : 226
Book Description
Investigation of Atomic-Layer-Deposition HfO2/InAs Metal-Oxide-Semiconductor Capacitors with Interfacial Passivation and Plasma Treatments
Author: Large Signal Analysis of the Metal Oxide Semiconductor Capacitor
Author: Augusto CabanaThe Study of Metal-oxide-semiconductor Capacitors on 6Hα-silicon Carbide Semiconducting Material
Author: Richard Charles Allen HarrisPublisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 258
Book Description
Scanning Photovoltage Investigation of Silicon- and Gallium Arsenide-Based Metal Oxide Semiconductor (MOS) Capacitors
Author: R. L. StreeverPublisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
The scanning photovoltage technique was used to image the semiconductor-oxide interface region of MOS capacitors based on silicon and on GaAs. The technique gives a 'photovoltage image' of optically active defects at the interface. Various types of defects and gross imperfections were observed. In the case of the GaAs MOS capacitors, a high density of gross imperfections resulting from surface damage was observed on lightly etched samples. Heavier etching was noted to eliminate this damage and the lower defect density can be correlated with improved device performance. (Author).
Theory of Metal Oxide Semiconductor Capacitor
Author: C. T. SahPublisher:
ISBN:
Category : Capacitors
Languages : en
Pages : 139
Book Description
The Study of Metal-oxide-semiconductor Capacitors on 6H[alpha]-silicon Carbide Semiconducting Material
![The Study of Metal-oxide-semiconductor Capacitors on 6H[alpha]-silicon Carbide Semiconducting Material PDF](https://books.google.com/books/content/images/frontcover/PsnUNwAACAAJ?fife=w80-h100)
Author: Richard Charles Allen HarrisPublisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 258
Book Description