Author: Gary Lynn HarrisPublisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 314
Book Description
An Experimental Study of Capless Annealing of Ion Implanted Gallium-arsenide
Author: Gary Lynn HarrisPublisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 314
Book Description
Scientific and Technical Aerospace Reports
Author: Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1370
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Annealing of Ion-implanted Gallium Arsenide
Author: Kevin Gary Orrman-RossiterPublisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 346
Book Description
Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide
Author: Mark R. WilsonA Comparative Study of Laser and Thermal Annealing of Zinc Ion Implanted Gallium Arsenide
Author: S. S. KularDeep Levels in Ion Implanted GaAs (Gallium Arsenide).
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 24
Book Description
In summary, the DLTS measurements have not found any majority carrier traps with a concentration greater than 1x ten to the 13th power cc after annealing an implanted sample at 850 C The implanted and annealed samples were found to have the same minority carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.
Controlled Atmosphere Annealing of Ion Implanted Gallium Arsenide
Author: C. L. AndersonPublisher:
ISBN:
Category :
Languages : en
Pages : 140
Book Description
Controlled atmosphere techniques were developed as an alternative to dielectric encapsulation for the high temperature anneal of ion implanted layers in GaAs. Two approaches: (1) the controlled atmosphere technique (CAT), and (2) the melt controlled ambient technique (MCAT) have been investigated. Using the CAT procedure, which involves annealing in flowing hydrogen with an arsenic overpressure, annealing without detectable surface erosion, has been performed at temperatures as high as 950 C, with or without encapsulants. Impurity diffusion, damage recovery, and electrical activity were investigated as a function of anneal parameters. Range studies of technologically important impurities such as S, Si, Se, Be and Mg were carried out. For the first time the role of the encapsulant on implanted profile degradation and the importance of Cr redistribution during the anneal cycle were determined. An improved CAT anneal system capable of production quantity throughput was developed and is in current use for device processing. (Author).
Laser Annealing of Ion Implanted Gallium Arsenide
Author: Robert S. Mason (2LT, USAF.)Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 120
Book Description
Pulsed Laser Annealing of Ion Implanted Gallium Arsenide
Author: Arkady Michael HorakProceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology
Author: G. R. SrinivasanPublisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 826
Book Description