Author: Maria Louise FilleulPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
An Examination of the Damage Caused by the Reactive Ion Etching of Gallium Arsenide
Author: Maria Louise FilleulComparison of SF6 and CF4 Reactive Ion Etching Induced Contamination and Damage on Gallium Arsenide
Author: Yohtz ChangPublisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 162
Book Description
The Study of Surface Damage of Callium Arsenide Induced by Reactive Ion Etching
Author: Mark Stephen PuttockIPAT 87
Author: Modeling of the Reactive Ion Etching of Gallium Arsenide Semiconductor
Author: Chandrasekharan KothandaramanPublisher:
ISBN:
Category :
Languages : en
Pages : 88
Book Description
Chlorine Reactive Ion Etching of Gallium Arsenide
Author: Joseph T. TustinPublisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 222
Book Description
Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 922
Book Description
Theses on any subject submitted by the academic libraries in the UK and Ireland.
Gallium Arsenide and Related Compounds 1990, Proceedings of the 17th INT Symposium on Gallium Arsenide and Related Compounds, Jersey, Channel Islands, September 1990
Author: K. E. SingerPublisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 672
Book Description
The 17th International Symposium on Gallium Arsenide and related Compounds was held in Jersey, Channel Islands, on 24 - 27 September 1990. This volume contains a total of 112 papers, including four invited papers and a number of late news papers. The papers are divided into eight chapters relating to various aspects of the subject. These include bulk and epitaxial growth, characterization, processing, electron transport, and both high speed and opto-electronic devices. Current research and recent developments in these areas are covered. Particularly apparent is the increasing importance of III-V devices. These proceedings will be invaluable to researchers in solid state semiconductor and device physics, both in industry and academia, as they represent the latest developments in this exciting and rapidly developing field.
Reactive Ion Etching of Gallium Arsenide and Aluminum Gallium Arsenide Using Boron Trichloride and Chlorine
Author: Douglas Ray HendricksPublisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 76
Book Description
Author: