Author: A. J. Levy
Publisher:
ISBN:
Category : Gamma rays
Languages : en
Pages : 92
Book Description
An Annular Lithium-drifted Germanium Detector for Studying Nuclear Reaction Gamma-rays
Author: A. J. Levy
Publisher:
ISBN:
Category : Gamma rays
Languages : en
Pages : 92
Book Description
Publisher:
ISBN:
Category : Gamma rays
Languages : en
Pages : 92
Book Description
Lithium-Drifted Germanium Detectors: Their Fabrication and Use
Author: I. C. Brownridge
Publisher: Springer Science & Business Media
ISBN: 1461345987
Category : Technology & Engineering
Languages : en
Pages : 222
Book Description
A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.
Publisher: Springer Science & Business Media
ISBN: 1461345987
Category : Technology & Engineering
Languages : en
Pages : 222
Book Description
A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.
Nuclear Science Abstracts
NASA Scientific and Technical Reports
Author: United States. National Aeronautics and Space Administration Scientific and Technical Information Division
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 472
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 472
Book Description
A Selected Listing of NASA Scientific and Technical Reports
Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Division
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 470
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 470
Book Description
Scientific and Technical Aerospace Reports
Monthly Catalog of United States Government Publications
Monthly Catalog of United States Government Publications
Author: United States. Superintendent of Documents
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1320
Book Description
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1320
Book Description
Monthly Catalog of United States Government Publications, Cumulative Index
Author: United States. Superintendent of Documents
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 1348
Book Description
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 1348
Book Description