Author: Mark Joseph DiPippo
Publisher:
ISBN:
Category :
Languages : en
Pages : 162
Book Description
An Analysis of the Heat Tranfer and Mass Transport Problem Involved in the Liquid Phase Epitaxial Growth Studies of Gallium Arsenide
Liquid Phase Epitaxial Growth of Gallium Arsenide
Author: Margaret Folkard
Publisher:
ISBN: 9780642898746
Category : Gallium arsenide
Languages : en
Pages : 25
Book Description
Publisher:
ISBN: 9780642898746
Category : Gallium arsenide
Languages : en
Pages : 25
Book Description
The Measurement of Temperature Instabilities and Their Effect on the Liquid Phase Epitaxial Growth of Gallium Arsenide
Author: Margaret Folkard
Publisher:
ISBN: 9780642898739
Category : Gallium arsenide
Languages : en
Pages : 14
Book Description
Publisher:
ISBN: 9780642898739
Category : Gallium arsenide
Languages : en
Pages : 14
Book Description
Scientific and Technical Aerospace Reports
Recent Advances in the Growth of Epitaxial Gallium Arsenide
Author: Kenneth L. Klohn
Publisher:
ISBN:
Category :
Languages : en
Pages : 43
Book Description
This report is a review of recent advances in the epitaxial growth of gallium arsenide. The lower temperatures (550-800C) associated with the epitaxial process, as compared to bulk growth (1240C), has aided in the achievement of high purity gallium arsenide layers with low defect density and good homogeneity. A number of systems have been investigated and developed for epitaxial growth of gallium arsenide and each of these is discussed in regard to its associated technology and procedure, chemical reaction, indicated results, advantages and disadvantages. These systems include: (1) vapor growth with the following vapor transport agents: HCl, GaCl3, water vapor, iodine, arsine; (2) liquid phase epitaxy; (3) traveling solvent zone; (4) vapor-liquid-solid; (5) evaporation. All systems require a careful surface preparation of the substrate and the use of high purity starting materials to obtain high purity Gas with good homogeneity and crystal perfection. The highest reported mobility for GaAs was obtained using the liquid phase solution regrowth technique. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 43
Book Description
This report is a review of recent advances in the epitaxial growth of gallium arsenide. The lower temperatures (550-800C) associated with the epitaxial process, as compared to bulk growth (1240C), has aided in the achievement of high purity gallium arsenide layers with low defect density and good homogeneity. A number of systems have been investigated and developed for epitaxial growth of gallium arsenide and each of these is discussed in regard to its associated technology and procedure, chemical reaction, indicated results, advantages and disadvantages. These systems include: (1) vapor growth with the following vapor transport agents: HCl, GaCl3, water vapor, iodine, arsine; (2) liquid phase epitaxy; (3) traveling solvent zone; (4) vapor-liquid-solid; (5) evaporation. All systems require a careful surface preparation of the substrate and the use of high purity starting materials to obtain high purity Gas with good homogeneity and crystal perfection. The highest reported mobility for GaAs was obtained using the liquid phase solution regrowth technique. (Author).
The Controlled Growth of Liquid Phase Epitaxial Gallium Arsenide Layers
Author: Michael Emmanuel Lee
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 224
Book Description
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 224
Book Description
International Aerospace Abstracts
Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition
Author: Vilnis Guntis Kreismanis
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 352
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 352
Book Description
The Liquid Phase Epitaxial Growth Of Gallium Arsenide And Aluminium Gallium Arsenide For Double Heterostructure Laser Diodes
Author: Standen Nigel Douglas
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 162
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 162
Book Description
Rapid Liquid Phase Epitaxial Growth Studies of GaAs
Author: Hendrik J. Gerritsen
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 57
Book Description
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 57
Book Description