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Amorphous Hydrogenated Silicon Carbide by Plasma Enhanced Chemical Vapor Deposition for Metal Matrix Composite Applications

Amorphous Hydrogenated Silicon Carbide by Plasma Enhanced Chemical Vapor Deposition for Metal Matrix Composite Applications PDF Author: Howard Smith Landis
Publisher:
ISBN:
Category :
Languages : en
Pages : 376

Book Description


Amorphous Hydrogenated Silicon Carbide by Plasma Enhanced Chemical Vapor Deposition for Metal Matrix Composite Applications

Amorphous Hydrogenated Silicon Carbide by Plasma Enhanced Chemical Vapor Deposition for Metal Matrix Composite Applications PDF Author: Howard Smith Landis
Publisher:
ISBN:
Category :
Languages : en
Pages : 376

Book Description


Room Temperature Deposition of Amorphous Hydrogenated Silicon Carbide by Ion-assisted Plasma Enhanced Chemical Vapor Deposition

Room Temperature Deposition of Amorphous Hydrogenated Silicon Carbide by Ion-assisted Plasma Enhanced Chemical Vapor Deposition PDF Author: Dongsun Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 408

Book Description


Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Silicon Carbide Films from Novel Precursors

Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Silicon Carbide Films from Novel Precursors PDF Author: Steven Walton Rynders
Publisher:
ISBN:
Category :
Languages : en
Pages : 742

Book Description
The influences of precursor molecular structure and electronic properties on the molecular structure, stoichiometry, and optical properties of a-SiC:H alloy films prepared through plasma enhanced chemical vapor deposition were investigated using infrared spectroscopy, ultraviolet-visible absorption spectroscopy, and sputtered neutral atom mass spectrometry (SNMS). Members of the homologous series tetramethylsilane (TeMS), trimethylsilane (TrMS), and dimethylsilane (DMS) as well as methane-silane (MS) were characterized as a-SiC:H precursors. Film structure, optical properties, and stoichiometry were studied as a function of precursor structure and deposition conditions, with deposition pressure serving as the manipulated variable. The infrared spectra of films prepared from the alkylsilane precursors revealed a strong dependence of the film structure on the deposition pressure, with high pressures ($>$0.1 torr) producing linear, polymeric films, and low pressures ($

Stoichiometric Hydrogenated Amorphous Silicon Carbide Thin Film Synthesis Using DC-saddle Plasma Enhanced Chemical Vapour Deposition

Stoichiometric Hydrogenated Amorphous Silicon Carbide Thin Film Synthesis Using DC-saddle Plasma Enhanced Chemical Vapour Deposition PDF Author: Behzad Jazizadeh Karimi
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description


Hydrogenated Amorphous Silicon Alloy Deposition Processes

Hydrogenated Amorphous Silicon Alloy Deposition Processes PDF Author: Werner Luft
Publisher: CRC Press
ISBN: 9780824791469
Category : Science
Languages : en
Pages : 344

Book Description
This reference reviews common film and plasma diagnostic techniques and the deposition and film properties of various hydrogenated amorphous silicon alloys (a-Si:H).;Drawing heavily from studies on a-Si:H solar cells and offering valuable insights into other semiconductor applications of a-Si:H and related alloys, Hydrogenated Amorphous Silicon Alloy Deposition Processes: describes conventional as well as alternative, deposition processes and compares the resulting material properties; systematically categorizes various a-Si:H deposition techniques; details the characteristics of a-Si:H and related alloys with both high and low optical bandgap, including a-SiC:H, a-SiGe:H, and a-SiSn:H; discusses basic designs of glow discharge deposition reactors; evaluates the etching properties of amorphous silicon-based alloys; and examines microcrystalline silicon and silicon carbide.;Providing over 825 literature citations for further study, Hydrogenated Amorphous Silicon Alloy Deposition Processes is an incomparable resource for physicists; materials scientists; chemical, process and production engineers; electrical engineers and technicians in the semiconductor industry; and upper-level undergraduate and graduate students in these disciplines.

Plasma Deposition of Amorphous Silicon-Based Materials

Plasma Deposition of Amorphous Silicon-Based Materials PDF Author: Pio Capezzuto
Publisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339

Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices

Remote Plasma Enhanced Chemical Vapor Deposition of Amorphous Hydrogenated Silicon Carbon Alloys

Remote Plasma Enhanced Chemical Vapor Deposition of Amorphous Hydrogenated Silicon Carbon Alloys PDF Author: Tanja R. Darden
Publisher:
ISBN:
Category : Amorphous substances
Languages : en
Pages : 154

Book Description


Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Inclusions

Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Inclusions PDF Author: Siri Suzanne Thompson
Publisher:
ISBN:
Category :
Languages : en
Pages : 138

Book Description


Amorphous and Crystalline Silicon Carbide II

Amorphous and Crystalline Silicon Carbide II PDF Author: Mahmud M. Rahman
Publisher: Springer Science & Business Media
ISBN: 3642750486
Category : Science
Languages : en
Pages : 238

Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.

Plasma Deposition of Amorphous Silicon-based Materials

Plasma Deposition of Amorphous Silicon-based Materials PDF Author: Giovanni Bruno
Publisher:
ISBN: 9780121379407
Category : Science
Languages : en
Pages : 324

Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices