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Author: Mahmud M. Rahman Publisher: Springer Science & Business Media ISBN: 3642750486 Category : Science Languages : en Pages : 238
Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Author: Mahmud M. Rahman Publisher: Springer Science & Business Media ISBN: 3642750486 Category : Science Languages : en Pages : 238
Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Author: Mahmud M. Rahman Publisher: Springer ISBN: 9783540516569 Category : Science Languages : en Pages : 232
Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Author: Cary Y. Yang Publisher: Springer Science & Business Media ISBN: 3642848044 Category : Science Languages : en Pages : 439
Book Description
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Author: Gary L. Harris Publisher: Springer ISBN: 9783642934063 Category : Science Languages : en Pages : 0
Book Description
Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
Author: Sadao Adachi Publisher: Springer Science & Business Media ISBN: 1461552478 Category : Technology & Engineering Languages : en Pages : 725
Book Description
Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.
Author: Publisher: Academic Press ISBN: 0080864503 Category : Technology & Engineering Languages : en Pages : 435
Book Description
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Author: David P. Landau Publisher: Springer Science & Business Media ISBN: 3642605974 Category : Science Languages : en Pages : 193
Book Description
Computer Simulation Studies in Condensed-Matter Physics IX covers recent developments in this field. This workshop was the ninth in this series and was held at the University of Georgia, March 4-9, 1996, and these proceedings form a record which is published with the goal of timely dissemination of the material to a wider audience. This volume is composed of three parts. The first section contains invited papers that deal with simulational studies of classical systems. The second section of the proceedings is devoted to invited papers on quantum systems, including new results for strongly correlated electron and quantum spin models. The final section comprises contributed presentations.
Author: David P. Landau Publisher: Springer Science & Business Media ISBN: 3642600956 Category : Science Languages : en Pages : 232
Book Description
More than a decade ago, because of the phenomenal growth in the power of computer simulations, The University of Georgia formed the first institutional unit devoted to the use of simulations in research and teaching: The Center for Simulational Physics. As the simulations community expanded further, we sensed a need for a meeting place for both experienced simulators and neophytes to discuss new techniques and recent results in an environment which promoted extended discussion. As a consequence, the Center for Simulational Physics established an annual workshop on Recent Developments in Computer Simulation Studies in Condensed Matter Physics. This year's workshop was the eleventh in this series, and the interest shown by the scientific community demonstrates quite clearly the useful purpose which the series has served. The latest workshop was held at The University of Georgia, February 23-27, 1998, and these proceedings provide a "status report" on a number of important topics. This volume is published with the goal of timely dissemination of the material to a wider audience. We wish to offer a special thanks to IBM Corporation for their generous support of this year's workshop. This volume contains both invited papers and contributed presentations on problems in both classical and quantum condensed matter physics. We hope that each reader will benefit from specialized results as well as profit from exposure to new algorithms, methods of analysis, and conceptual developments. Athens, GA, U. S. A. D. P. Landau April 1998 H-B.
Author: Giorgio Benedek Publisher: Springer Science & Business Media ISBN: 3642763707 Category : Science Languages : en Pages : 299
Book Description
"Exotic Atoms in Condensed Matter" reviews the state of the art in this field, from meson factories to the basic interactions of muons in condensed matter. The application of muon- and pion-based analysis of solid state structural, magnetic and superconducting properties is discussed. The spectroscopic features of exotic atoms are reviewed together with their application to chemical analysis. Also, muon-catalyzed fusion is presented.
Author: Sam Zhang Publisher: CRC Press ISBN: 1420093975 Category : Technology & Engineering Languages : en Pages : 415
Book Description
Authored by leading experts from around the world, the three-volume Handbook of Nanostructured Thin Films and Coatings gives scientific researchers and product engineers a resource as dynamic and flexible as the field itself. The first two volumes cover the latest research and application of the mechanical and functional properties of thin films an
Author: Mahmud M. Rahman
Author: Mahmud M. Rahman
Author: Mahmud M. Rahman
Author: Cary Y. Yang
Author: Gary L. Harris
Author: Sadao Adachi
Author: 
Author: David P. Landau
Author: David P. Landau
Author: Giorgio Benedek
Author: Sam Zhang