Aluminium Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films PDF Download
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Author: Lebogang Kotsedi Publisher: ISBN: Category : Amorphous semiconductors Languages : en Pages : 92
Book Description
This study was carried out to crystallize hydrogenerated amorphous silicon thin films using the aluminium induced crystallization technique. This was done to investigate whether there is any lateral crystallization of the amorphous silicon thin film away from the aluminium covered surface of the film.
Author: Lebogang Kotsedi Publisher: ISBN: Category : Amorphous semiconductors Languages : en Pages : 92
Book Description
This study was carried out to crystallize hydrogenerated amorphous silicon thin films using the aluminium induced crystallization technique. This was done to investigate whether there is any lateral crystallization of the amorphous silicon thin film away from the aluminium covered surface of the film.
Author: Zumin Wang Publisher: CRC Press ISBN: 9814463418 Category : Science Languages : en Pages : 317
Book Description
Crystalline semiconductors in the form of thin films are crucial materials for many modern, advanced technologies in fields such as microelectronics, optoelectronics, display technology, and photovoltaic technology. Crystalline semiconductors can be produced at surprisingly low temperatures (as low as 120C) by crystallization of amorphous semicon
Author: Taekon Kim Publisher: ISBN: Category : Languages : en Pages :
Book Description
ABSTRACT: Crystallization of amorphous Si (a-Si) thin film has received extensive interest for their attractive applications into Si thin film transistors and Si based solar cells. Among various crystallization techniques, Solid phase crystallization (SPC) and Excimer laser crystallization (ELC) were investigated. Firstly, Solid phase crystallization (SPC) of amorphous silicon thin films deposited by the DC magnetron sputtering system with a modification in nucleation step was investigated at low temperature. The thin film consists of polycrystalline nanoparticles embedded in an amorphous matrix which can act as nuclei during crystallization, resulting in a lower thermal energy for the nucleation. The lowering energy barrier for nucleation would shorten the transition time from amorphous into polycrystalline silicon resulting from the reduction of incubation time and also lower the processing temperature spontaneously. In addition, a comprehensive study of the growth mechanism of the sputtered amorphous silicon thin films is presented during annealing. Samples were prepared with various substrate temperatures and RF power in order to optimize the crystallization of a-Si after the deposition. Also, the effects of annealing condition were examined. Low pressure N2 ambient during SPC promoted crystallization of a-Si thin films and the crystallinity. The low pressure annealing had a large impact on the crystallinity and growth behavior of subsequent films.
Author: Taylor Nicole Grueser Publisher: ISBN: Category : Aluminum Languages : en Pages : 52
Book Description
Crystalline silicon is a key component in many modern technologies, but can be difficult to produce. Ideally, thin films of crystalline silicon would be created by heating amorphous silicon to the point of crystallization (800 °C), but at this high temperature many low-cost substrates, such as glass and plastics, melt. As such, methods to lower the crystallization temperature of amorphous silicon are of great interest in materials research. This thesis looks at one such method, Metal-Induced Crystallization (MIC), in which contact with a metal induces crystallization of amorphous silicon at much lower temperatures. Specifically, we examine aluminum and beryllium induced crystallization, and investigate the variables within MIC that affect the crystallization temperature..
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.
Author: Lebogang Kotsedi
Author: Lebogang Kotsedi
Author: Khalil Hashem Sharif
Author: Sampath Kumar Paduru
Author: Zumin Wang
Author: Taekon Kim
Author: Ozgenc Ebil
Author: Taylor Nicole Grueser
Author: 
Author: Maruf Hossain
Author: