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Author: National Aeronautics and Space Adm Nasa Publisher: ISBN: 9781731344304 Category : Languages : en Pages : 160
Book Description
The characterization of 8300 A lasers was broadened, especially in the area of beam quality. Modulation rates up to 2 Gbit/sec at output powers of 20 mW were observed, waveform fidelity was fully adequate for low BER data transmission, and wavefront measurements showed that phase aberrations were less than lamda/50. Also, individually addressable arrays of up to ten contiguous diode lasers were fabricated and tested. Each laser operates at powers up to 30 mW CW in single spatial mode. Shifting the operating wavelength of the basic CSP laser from 8300 A to 8650 A was accomplished by the addition of Si to the active region. Output power has reached 100 mW single mode, with excellent far field wave front properties. Operating life is currently approx. 1000 hrs at 35 mW CW. In addition, laser reliability, for operation at both 8300 A and 8650 A, has profited significantly from several developments in the processing procedures. Goldstein, B. and Pultz, G. N. and Carlin, D. B. and Slavin, S. E. and Ettenberg, M. ALUMINUM GALLIUM ARSENIDES; GALLIUM ARSENIDE LASERS; HETEROJUNCTION DEVICES; SEMICONDUCTOR DIODES; LASER OUTPUTS; PHASE LOCKED SYSTEMS; PHASE MODULATION; PHASED ARRAYS...
Author: National Aeronautics and Space Adm Nasa Publisher: ISBN: 9781731344304 Category : Languages : en Pages : 160
Book Description
The characterization of 8300 A lasers was broadened, especially in the area of beam quality. Modulation rates up to 2 Gbit/sec at output powers of 20 mW were observed, waveform fidelity was fully adequate for low BER data transmission, and wavefront measurements showed that phase aberrations were less than lamda/50. Also, individually addressable arrays of up to ten contiguous diode lasers were fabricated and tested. Each laser operates at powers up to 30 mW CW in single spatial mode. Shifting the operating wavelength of the basic CSP laser from 8300 A to 8650 A was accomplished by the addition of Si to the active region. Output power has reached 100 mW single mode, with excellent far field wave front properties. Operating life is currently approx. 1000 hrs at 35 mW CW. In addition, laser reliability, for operation at both 8300 A and 8650 A, has profited significantly from several developments in the processing procedures. Goldstein, B. and Pultz, G. N. and Carlin, D. B. and Slavin, S. E. and Ettenberg, M. ALUMINUM GALLIUM ARSENIDES; GALLIUM ARSENIDE LASERS; HETEROJUNCTION DEVICES; SEMICONDUCTOR DIODES; LASER OUTPUTS; PHASE LOCKED SYSTEMS; PHASE MODULATION; PHASED ARRAYS...
Author: National Aeronautics and Space Administration (NASA) Publisher: Createspace Independent Publishing Platform ISBN: 9781722933357 Category : Languages : en Pages : 158
Book Description
The characterization of 8300 A lasers was broadened, especially in the area of beam quality. Modulation rates up to 2 Gbit/sec at output powers of 20 mW were observed, waveform fidelity was fully adequate for low BER data transmission, and wavefront measurements showed that phase aberrations were less than lamda/50. Also, individually addressable arrays of up to ten contiguous diode lasers were fabricated and tested. Each laser operates at powers up to 30 mW CW in single spatial mode. Shifting the operating wavelength of the basic CSP laser from 8300 A to 8650 A was accomplished by the addition of Si to the active region. Output power has reached 100 mW single mode, with excellent far field wave front properties. Operating life is currently approx. 1000 hrs at 35 mW CW. In addition, laser reliability, for operation at both 8300 A and 8650 A, has profited significantly from several developments in the processing procedures. Goldstein, B. and Pultz, G. N. and Carlin, D. B. and Slavin, S. E. and Ettenberg, M. Unspecified Center ALUMINUM GALLIUM ARSENIDES; GALLIUM ARSENIDE LASERS; HETEROJUNCTION DEVICES; SEMICONDUCTOR DIODES; LASER OUTPUTS; PHASE LOCKED SYSTEMS; PHASE MODULATION; PHASED ARRAYS...
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
We report our results on experimental study of photovoltage, induced by pulsed CO2 laser in GaAs/AlGaAs heterojunctions. We show that photoemission of hot carriers across the potential barrier is the dominant mechanism in formation of the photovoltage. The analysis of the current-voltage characteristic reveals that the photocurrent has maximum at bias voltage related to the potential barrier height of p-n heterojunction. Moreover, we demostrate that the use of heterojunction has an advantage over homojunction in the infrared detection.
Author: William T. Silfvast Publisher: Cambridge University Press ISBN: 1139855573 Category : Science Languages : en Pages : 999
Book Description
Laser Fundamentals provides a clear and comprehensive introduction to the physical and engineering principles of laser operation and design. Simple explanations, based throughout on key underlying concepts, lead the reader logically from the basics of laser action to advanced topics in laser physics and engineering. Much new material has been added to this second edition, especially in the areas of solid-state lasers, semiconductor lasers, and laser cavities. This 2004 edition contains a new chapter on laser operation above threshold, including extensive discussion of laser amplifiers. The clear explanations, worked examples, and many homework problems will make this book invaluable to undergraduate and first-year graduate students in science and engineering taking courses on lasers. The summaries of key types of lasers, the use of many unique theoretical descriptions, and the extensive bibliography will also make this a valuable reference work for researchers.
Author: Institution of Electrical Engineers Publisher: IET ISBN: 9780863412042 Category : Science Languages : en Pages : 330
Book Description
This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.
Author: National Aeronautics and Space Adm Nasa
Author: National Aeronautics and Space Adm Nasa
Author: National Aeronautics and Space Administration (NASA)
Author: B. Goldstein
Author: 
Author: Dan Botez
Author: Jimmie Lee Russell
Author: 
Author: William T. Silfvast
Author: Dan Botez
Author: Institution of Electrical Engineers