Advanced Physical Models for Silicon Device Simulation PDF Download

Author: Andreas Schenk
Publisher: Springer Science & Business Media
ISBN: 370916494X
Category : Technology & Engineering
Languages : en
Pages : 370

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Book Description
From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal

Author: Tor A Fjeldly
Publisher: World Scientific
ISBN: 9814493260
Category : Technology & Engineering
Languages : en
Pages : 188

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Book Description
The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.

Author: Heiner Ryssel
Publisher: Springer Science & Business Media
ISBN: 3709166195
Category : Computers
Languages : en
Pages : 515

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Book Description
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

Author: Christopher M. Snowden
Publisher: Springer Science & Business Media
ISBN: 1447110331
Category : Technology & Engineering
Languages : en
Pages : 267

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Book Description
Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.

Author: J.S. Yuan
Publisher: Springer Science & Business Media
ISBN: 148991904X
Category : Technology & Engineering
Languages : en
Pages : 341

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Book Description
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.

Author: Siegfried Selberherr
Publisher: Springer Science & Business Media
ISBN: 3709166578
Category : Computers
Languages : en
Pages : 525

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Book Description
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.

Author: Vassil Palankovski
Publisher: Springer Science & Business Media
ISBN: 3709105609
Category : Technology & Engineering
Languages : en
Pages : 309

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Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Author: Dimitris Tsoukalas
Publisher: Springer Science & Business Media
ISBN: 9783211837085
Category : Computers
Languages : en
Pages : 478

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Book Description
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Author: Kristin De Meyer
Publisher: Springer Science & Business Media
ISBN: 3709168279
Category : Technology & Engineering
Languages : en
Pages : 423

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Book Description
This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)

Author: Christoph Jungemann
Publisher: Springer Science & Business Media
ISBN: 3709160863
Category : Technology & Engineering
Languages : en
Pages : 278

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Book Description
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.