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Author: Ashish Raman Publisher: CRC Press ISBN: 1000577236 Category : Technology & Engineering Languages : en Pages : 410
Book Description
This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
Author: Ashish Raman Publisher: CRC Press ISBN: 1000577236 Category : Technology & Engineering Languages : en Pages : 410
Book Description
This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
Author: C. Claeys Publisher: Springer Science & Business Media ISBN: 9783540433934 Category : Business & Economics Languages : en Pages : 440
Book Description
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Author: Eugenia V. Buzaneva Publisher: Springer Science & Business Media ISBN: 9401003416 Category : Science Languages : en Pages : 497
Book Description
Proceedings of the NATO Advanced Research Workshop on Frontiers in Molecular-Scale Science and Technology of Fullerence, Nanotube, Nanosilicon, Biopolymer (DNA, Protein) Multifunctional Nanosystems, Kyiv, Ukraine, 9-12 September 2001
Author: Vikas Choudhary Publisher: CRC Press ISBN: 135183228X Category : Medical Languages : en Pages : 481
Book Description
The microelectromechanical systems (MEMS) industry has experienced explosive growth over the last decade. Applications range from accelerometers and gyroscopes used in automotive safety to high-precision on-chip integrated oscillators for reference generation and mobile phones. MEMS: Fundamental Technology and Applications brings together groundbreaking research in MEMS technology and explores an eclectic set of novel applications enabled by the technology. The book features contributions by top experts from industry and academia from around the world. The contributors explain the theoretical background and supply practical insights on applying the technology. From the historical evolution of nano micro systems to recent trends, they delve into topics including: Thin-film integrated passives as an alternative to discrete passives The possibility of piezoelectric MEMS Solutions for MEMS gyroscopes Advanced interconnect technologies Ambient energy harvesting Bulk acoustic wave resonators Ultrasonic receiver arrays using MEMS sensors Optical MEMS-based spectrometers The integration of MEMS resonators with conventional circuitry A wearable inertial and magnetic MEMS sensor assembly to estimate rigid body movement patterns Wireless microactuators to enable implantable MEMS devices for drug delivery MEMS technologies for tactile sensing and actuation in robotics MEMS-based micro hot-plate devices Inertial measurement units with integrated wireless circuitry to enable convenient, continuous monitoring Sensors using passive acousto-electric devices in wired and wireless systems Throughout, the contributors identify challenges and pose questions that need to be resolved, paving the way for new applications. Offering a wide view of the MEMS landscape, this is an invaluable resource for anyone working to develop and commercialize MEMS applications.
Author: Dieter K. Schroder Publisher: John Wiley & Sons ISBN: 0471739065 Category : Technology & Engineering Languages : en Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Mikhail Baklanov Publisher: John Wiley & Sons ISBN: 0470065419 Category : Technology & Engineering Languages : en Pages : 508
Book Description
The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Author: Muhammad Mustafa Hussain Publisher: John Wiley & Sons ISBN: 352734358X Category : Technology & Engineering Languages : en Pages : 284
Book Description
Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
Author: Razali Ismail Publisher: CRC Press ISBN: 143985680X Category : Science Languages : en Pages : 459
Book Description
While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.
Author: Angsuman Sarkar Publisher: Walter de Gruyter GmbH & Co KG ISBN: 3110455455 Category : Technology & Engineering Languages : en Pages : 404
Book Description
This book teaches basic and advanced concepts, new methodologies and recent developments in VLSI technology with a focus on low power design. It provides insight on how to use Tanner Spice, Cadence tools, Xilinx tools, VHDL programming and Synopsis to design simple and complex circuits using latest state-of-the art technologies. Emphasis is placed on fundamental transistor circuit-level design concepts.
Author: Ashish Raman
Author: Ashish Raman
Author: C. Claeys
Author: Eugenia V. Buzaneva
Author: Vikas Choudhary
Author: Dieter K. Schroder
Author: Fred Roozeboom
Author: Mikhail Baklanov
Author: Muhammad Mustafa Hussain
Author: Razali Ismail
Author: Angsuman Sarkar