Acoustic Emission and the Semiconductor: Metal Transition in Vanadium Dioxide Thin Films PDF Download
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Author: S. L. McBride Publisher: ISBN: Category : Languages : en Pages : 7
Book Description
The electrical resistance of the VO2 film was measured concurrently with the acoustic emissions using the four-lead method. The data show all the main features observed during several hundred cycles of the sample through the transition temperature range. Little variation in the behaviour was observed provided the thermal history of the sample was not irregular. The temperature was cycled between 50C and 90C.
Author: S. L. McBride Publisher: ISBN: Category : Languages : en Pages : 7
Book Description
The electrical resistance of the VO2 film was measured concurrently with the acoustic emissions using the four-lead method. The data show all the main features observed during several hundred cycles of the sample through the transition temperature range. Little variation in the behaviour was observed provided the thermal history of the sample was not irregular. The temperature was cycled between 50C and 90C.
Author: Warren P. Mason Publisher: Elsevier ISBN: 0323152511 Category : Science Languages : en Pages : 393
Book Description
Physical Acoustics: Principles and Methods, Volume XV is a four-chapter text that covers the history of ultrasonics, interdigital transducers, theory of resonance scattering, and acoustic emission. Chapter 1 provides the history of ultrasonics and the developments of its application in crystal transducers, oscillators, selective wave filters, underwater sound, dentistry, and medicine. Chapter 2 is a comprehensive account of the use of circuit model analysis to design interdigital transducers (IDTs) for surface acoustic wave (SAW) devices. This chapter also looks into the total filter design problem for the important case of SAW filters composed solely of IDTs and matching circuits. Chapter 3 discusses the resonance scattering theory, its application to acoustic-and elastic-wave scattering, and the relevant experiments. Chapter 4 deals with the optical detection of acoustic emissions, acoustic emissions during various transformations, and dislocation effects. Researchers in the fields of electronics technology and applied and engineering mechanics will find this book invaluable.
Author: Xing Zhong Publisher: ISBN: Category : Electronic dissertations Languages : en Pages : 133
Book Description
Vanadium dioxide (VO_2), standing out from the thermochromic vanadium oxide family (VO, V_2 O_3,V_2 O_5,VO_2), is intensively studied for its abrupt and reversible semiconductormetal transition (SMT) that happens slightly above room temperature (T_c 340 K). Interestingly, the transition can be triggered not only by temperature change, but also by many other forms of excitations, e.g. infrared irradiation, external strain, and applied voltage. The underlying mechanism of the transition is still in debate, and a model to describe the transport properties near T_c is needed for utilizing this material. Recent studies have revealed that near the transition, there is a phase coexistence between the semiconducting monoclinic phase and the metallic rutile phase in this material. In this presentation, the growth of epitaxial VO_2 thin films on TiO_2 substrates by chemical vapor deposition and the characterizations of their structural and electrical properties will be discussed. Detailed studies on DC resistivity, current-voltage characteristics and impedance spectroscopy of deposited films at various ambient temperatures have been performed. By considering the ensemble average of the transport properties of VO_2 films near T_c as a superposition of the transport properties of the two phases, and assuming a distribution of transition temperatures across the whole film, we have derived parameterized models to fit the temperature dependence of both resistivity and impedance of VO_2 thin films in the vicinity of SMT. Voltage triggered breakdown in micron-scale two-terminal planar VO_2 devices has been tested and modeled. An avalanching-like breakdown mechanism is elicited by considering a competition between Joule heating and heat dissipation, that could explain the faster-than-expected transition observed in this kind of devices. To further study the physics of SMT, the design and implementation of a cross-spectrum analyzer for measuring VO_2 transport noise near T_c will be demonstrated. Our preliminary results reveal a significant increase in the noise power spectral density near the transition, possibly induced by the metastability of current percolation.
Author: Publisher: ISBN: Category : Nuclear energy Languages : en Pages : 1022
Book Description
NSA is a comprehensive collection of international nuclear science and technology literature for the period 1948 through 1976, pre-dating the prestigious INIS database, which began in 1970. NSA existed as a printed product (Volumes 1-33) initially, created by DOE's predecessor, the U.S. Atomic Energy Commission (AEC). NSA includes citations to scientific and technical reports from the AEC, the U.S. Energy Research and Development Administration and its contractors, plus other agencies and international organizations, universities, and industrial and research organizations. References to books, conference proceedings, papers, patents, dissertations, engineering drawings, and journal articles from worldwide sources are also included. Abstracts and full text are provided if available.
Author: Shriram Ramanathan Publisher: Springer Science & Business Media ISBN: 1441906649 Category : Technology & Engineering Languages : en Pages : 344
Book Description
Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
Author: S. L. McBride
Author: S. L. McBride
Author: M. R. Louthan
Author: Warren P. Mason
Author: Eugenii U. Donev
Author: Xing Zhong
Author: 
Author: Technology Reports Centre (Great Britain)
Author: Warren Perry Mason
Author: Shriram Ramanathan
Author: Joyeeta Nag