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A Tabulation of Some Semiconductor Integrals

A Tabulation of Some Semiconductor Integrals PDF Author: Richard Maurice Brown
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 24

Book Description


A Tabulation of Some Semiconductor Integrals

A Tabulation of Some Semiconductor Integrals PDF Author: Richard Maurice Brown
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 24

Book Description


A Tabulation of Some Semiconductor Integrals

A Tabulation of Some Semiconductor Integrals PDF Author: Richard Maurice Brown
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 16

Book Description


Government-wide Index to Federal Research & Development Reports

Government-wide Index to Federal Research & Development Reports PDF Author:
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 720

Book Description


Circular

Circular PDF Author: University of Illinois (Urbana-Champaign campus) Engineering Experiment Station
Publisher:
ISBN:
Category : Testing
Languages : en
Pages : 24

Book Description


Computer Mathematics, Series II

Computer Mathematics, Series II PDF Author: Geoffrey Knight
Publisher:
ISBN:
Category : Computer science
Languages : en
Pages : 558

Book Description
General numerical and symbolic analysis; Elementary algebra; Calculus; Difference, differential and integral equations; Abstracts mathematics; Probability and statistics; Optimization mathematical programming: operations research; Mathematical communication theory: information theory; Mathematical systems and control theory; Mathematical logic and switching theory: automata.

Understanding Superior New Product Development

Understanding Superior New Product Development PDF Author: Ina Horn
Publisher: Kohlhammer Verlag
ISBN: 3170294598
Category : Business & Economics
Languages : en
Pages : 291

Book Description
This book is available as Book on Demand. Over the past decade, many companies in the semiconductor and aerospace industries have significantly upgraded their new product development processes, with disciplined timelines, strict design reviews, 'gates' to decision making and cross-functional collaboration. Some companies are outperforming their industry peers in terms of time-to-market and meeting customer needs. This raises the question of how companies can achieve and sustain performance based on the new product development function. To answer this question the present book analyzes the new product development process with a focus on the underlying dynamic capabilities, how such routines evolve on different organizational levels, and what are the associated social phenomena. Comparative case study evidence suggests that higher order resource reconfiguration and integration routines are established idiosyncratically. It is argued that simple, perception-based and loosely-coupled routines seem to be more effective for reconfiguring responsibilities and task sequences. On the other hand, detailed, codified and rigid higher-order routines were found more effective for integrating personnel, outsourced services and new technology.

Three-Dimensional Integration of Semiconductors

Three-Dimensional Integration of Semiconductors PDF Author: Kazuo Kondo
Publisher: Springer
ISBN: 3319186752
Category : Science
Languages : en
Pages : 423

Book Description
This book starts with background concerning three-dimensional integration - including their low energy consumption and high speed image processing - and then proceeds to how to construct them and which materials to use in particular situations. The book covers numerous applications, including next generation smart phones, driving assistance systems, capsule endoscopes, homing missiles, and many others. The book concludes with recent progress and developments in three dimensional packaging, as well as future prospects.

Heavily Doped Semiconductors

Heavily Doped Semiconductors PDF Author: V. I. Fistul
Publisher: Springer Science & Business Media
ISBN: 146848821X
Category : Science
Languages : en
Pages : 428

Book Description
Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.

More-than-Moore Devices and Integration for Semiconductors

More-than-Moore Devices and Integration for Semiconductors PDF Author: Francesca Iacopi
Publisher: Springer Nature
ISBN: 3031216105
Category : Technology & Engineering
Languages : en
Pages : 271

Book Description
This book provides readers with a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems with a broad range of functionalities that can be added to 3D microsystems, including flexible electronics, metasurfaces and power sources. The book also includes examples of applications for brain-computer interfaces and event-driven imaging systems. Provides a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems; Covers functionalities to add to 3D microsystems, including flexible electronics, metasurfaces and power sources; Includes current applications, such as brain-computer interfaces, event - driven imaging and edge computing.

Epitaxy of Semiconductors

Epitaxy of Semiconductors PDF Author: Udo W. Pohl
Publisher: Springer Nature
ISBN: 3030438694
Category : Technology & Engineering
Languages : en
Pages : 546

Book Description
The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.