Author: Ellidus Anno Allan HaanPublisher:
ISBN:
Category :
Languages : en
Pages : 226
Book Description
A Study of Metal Oxide Semiconductor Capacitors when Subjected to Illumination
Author: Ellidus Anno Allan HaanPublisher:
ISBN:
Category :
Languages : en
Pages : 226
Book Description
Experimental Study of Metal-oxide-semiconductor Capacitors
Author: Karl Harry ZainingerPublisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 312
Book Description
Canadian Theses
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 436
Book Description
The Study of Metal-oxide-semiconductor Capacitors on 6H[alpha]-silicon Carbide Semiconducting Material
![The Study of Metal-oxide-semiconductor Capacitors on 6H[alpha]-silicon Carbide Semiconducting Material PDF](https://books.google.com/books/content/images/frontcover/PsnUNwAACAAJ?fife=w80-h100)
Author: Richard Charles Allen HarrisPublisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 258
Book Description
Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors
Author: Y. IchidaPublisher:
ISBN:
Category : Electrical activity
Languages : en
Pages : 12
Book Description
The gettering effect of phosphorus diffusion to the back surface of a silicon wafer on oxidation-induced stacking faults has been studied by evaluating the generation lifetime from the transient response of metal oxide semiconductor (MOS) capacitors. The generation lifetime of wafers subjected to postoxidation phosphorus diffusion gettering is not remarkably decreased by the presence of stacking faults. On the other hand, the generation lifetime of waters subjected to preoxidation gettering is decreased by two orders of magnitude because of the presence of stacking faults. The result is explained by impurity precipitation to Frank partial dislocations bounding stacking faults.
The Study of Metal-oxide-semiconductor Capacitors on 6Hα-silicon Carbide Semiconducting Material
Author: Richard Charles Allen HarrisPublisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 258
Book Description
Further Investigation of the Large Signal Behavior of Metal Oxide Semiconductor Capacitors
Author: Cecil Tzechor HoElectrical Transport in Metal-Oxide-Semiconductor Capacitors
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.
Theory of Metal Oxide Semiconductor Capacitor
Author: C. T. SahPublisher:
ISBN:
Category : Capacitors
Languages : en
Pages : 139
Book Description
Author: John Lloyd Collins