Author: Frank Browning EllisPublisher:
ISBN:
Category : Semiconductor films
Languages : en
Pages : 197
Book Description
A Simple Method for Preparing Hydrogenated Amorphous Silicon Films by Chemical Vapour Deposition at Atmospheric Pressure
Author: Frank Browning EllisPublisher:
ISBN:
Category : Semiconductor films
Languages : en
Pages : 197
Book Description
A Simple Method for Preparing Hydrogenated Amorphous Silicon Films by Chemical Vapor Deposition at Atmospheric Pressure
Author: Frank Browning EllisPublisher:
ISBN:
Category : Hydrogenation
Languages : en
Pages : 400
Book Description
Energy Research Abstracts
Author: Atmospheric Pressure Chemical Vapor Desposition of Hydrogenated Amorphous Silicon from Higher Silances
Author: Richard Joseph McCurdyPublisher:
ISBN:
Category : Thin films
Languages : en
Pages : 394
Book Description
Atmospheric Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon, Titanium Nitride, and Titanium Dioxide Thin Films
Author: Sarah R. KurtzPublisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 254
Book Description
Solar Energy Update
Author: The Physics of Hydrogenated Amorphous Silicon I
Author: J.D. JoannopoulosPublisher: Springer
ISBN: 9783540128076
Category : Science
Languages : en
Pages : 312
Book Description
With contributions by numerous experts
International Aerospace Abstracts
Author: Chemical Vapor Deposition of Amorphous Silicon Films Produced by Using Higher Order Silanes
Author: Amir MikhailPublisher:
ISBN:
Category : Silicon nitride
Languages : en
Pages : 0
Book Description
Various chemical vapor deposition (CVD) techniques performed by research groups under contract to SERI in the area of chemical vapor deposition of hydrogenated amorphous silicon by using higher order silanes are discussed in this report. The static CVD system was found to produce films with nonuniform stoichiometry. All flow systems were capable of depositing films that produced a short-circuit current density of 10mA/cm2. Results of measurements performed at SERI and at the Naval Research Laboratory led to basic reactor modifications and increased emphasis on substrate diffusion barrier research.
Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques. Final Report, 1 January 1979-31 May 1980
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Ion plating techniques for the preparation of hydrogenated amorphous silicon thin films have been successfully developed. The technique involves essentially the evaporation of elemental silicon through a d.c. produced hydrogen plasma. In this way hydrogen has been successfully incorporated into amorphous silicon films in concentrations as high as 30 atomic percent. Infrared spectroscopy indicates the usual SiHx stretching mode at approximately 2000 cm−1. Further evidence for the bonding of hydrogen was obtained from ESR measurement of hydrogenated and unhydrogenated samples. The measured unpaired spin density was a factor of 25 less in the hydrogenated sample. The optical absorption edges of the hydrogenated films fell in the usual range between 1.7 and 1.9 eV. Electrical conductivity measurements indicated a substantial reduction in the density of defect states in the gap as expected. It was also shown that hydrogenated amorphous silicon prepared by ion-plating could be doped by co-evaporation of the dopant element during film deposition. Both co-evaporated phosphorous and co-evaporated bismuth have been found to substantially increase the dark conductivity of a-Si:H while shifting the Fermi level towards the conduction band edge. An x-ray method for estimating the density and hydrogen content of a-Si:H has been developed. The measurement of strain in a-Si:H thin films is discussed. (WHK).