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Author: Michel Ann Reece Publisher: ISBN: Category : Amplifiers, Radio frequency Languages : en Pages : 334
Book Description
Highly efficient, compact solid-state power amplifier (SSPA) MMICs are required for today's expanding satellite communication applications at Ka-band frequencies. The need for higher data rates, reduced cost, and submicron sizes makes SSPA technologies at Ka-band very attractive. A technique that can be employed to realize high efficiency operation of power amplifiers at microwave frequencies is to employ a Class F amplifier configuration. In order to obtain Class F performance, the output circuit is tuned to pass the fundamental, short (suppress) the second (even) harmonics, and provide an open to the third (odd) harmonics. Thus, providing theoretically an efficiency of 100%. However, at microwave frequencies, transistors are far from ideal. Accurate models are needed to predict the transistor's exotic performance in a circuit. Artificial neural network (ANN) models are a choice alternative for MMIC circuit designers to implement. ANNs have the capability to learn generalize patterns in data and model high linearities. Recently, research has been done that has proved that Knowledge-based Neural Networks (KBNN) are capable of modeling a transistor's small-signal and large-signal characteristics and are quite attractive for implementation in CAD packages. This research employs the use of Class F matching techniques in several prototype single-stage amplifier designs in order to achieve improved efficiency performance at Ka-band frequencies. In addition, Class F MMIC amplifier designs at C-band are also discussed to verify the feasibility of approach. Advanced knowledge-based neural network modeling techniques are implemented for a 300um device in a .25um GaAs PHEMT technology. A KBNN model extraction methodology is derived and integration into a commercial computer-aided (CAD) tool is discussed. A design methodology is developed and utilized to achieve record measured performance of 62% Power-Added-Efficiency at 31 GHz with a gain of 8.7dB and an output power of 18.3dBm. A secondary purpose of this research discusses the impact of the implementation of knowledge-based neural network modeling technique to the design process. -- Abstract.
Author: Michel Ann Reece Publisher: ISBN: Category : Amplifiers, Radio frequency Languages : en Pages : 334
Book Description
Highly efficient, compact solid-state power amplifier (SSPA) MMICs are required for today's expanding satellite communication applications at Ka-band frequencies. The need for higher data rates, reduced cost, and submicron sizes makes SSPA technologies at Ka-band very attractive. A technique that can be employed to realize high efficiency operation of power amplifiers at microwave frequencies is to employ a Class F amplifier configuration. In order to obtain Class F performance, the output circuit is tuned to pass the fundamental, short (suppress) the second (even) harmonics, and provide an open to the third (odd) harmonics. Thus, providing theoretically an efficiency of 100%. However, at microwave frequencies, transistors are far from ideal. Accurate models are needed to predict the transistor's exotic performance in a circuit. Artificial neural network (ANN) models are a choice alternative for MMIC circuit designers to implement. ANNs have the capability to learn generalize patterns in data and model high linearities. Recently, research has been done that has proved that Knowledge-based Neural Networks (KBNN) are capable of modeling a transistor's small-signal and large-signal characteristics and are quite attractive for implementation in CAD packages. This research employs the use of Class F matching techniques in several prototype single-stage amplifier designs in order to achieve improved efficiency performance at Ka-band frequencies. In addition, Class F MMIC amplifier designs at C-band are also discussed to verify the feasibility of approach. Advanced knowledge-based neural network modeling techniques are implemented for a 300um device in a .25um GaAs PHEMT technology. A KBNN model extraction methodology is derived and integration into a commercial computer-aided (CAD) tool is discussed. A design methodology is developed and utilized to achieve record measured performance of 62% Power-Added-Efficiency at 31 GHz with a gain of 8.7dB and an output power of 18.3dBm. A secondary purpose of this research discusses the impact of the implementation of knowledge-based neural network modeling technique to the design process. -- Abstract.
Author: Publisher: ISBN: Category : Languages : en Pages : 5
Book Description
Two high efficiency Ku-band pHEMT power amplifier MMICs are presented in this paper. A single, stage, high efficiency amplifier provides a peak power added efficiency of 57.6% with 10.5 dB associated gain and 26.5 dBm output power into a 50 Ohms load at 14 GHz. Additionally, a dual stage, high gain amplifier provides a peak power added efficiency of 50.4% with 19.7 dB associated gain and 27.5 dBm output power into a 50 Ohms load at 14.3 GHz. State-of-the-art efficiency performance at these frequencies is achieved through Class-F transistor operation. Process selection, circuit design, and measured results are described.
Author: Paolo Colantonio Publisher: John Wiley & Sons ISBN: 9780470746554 Category : Technology & Engineering Languages : en Pages : 514
Book Description
Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
A 3-Watt and a 5-Watt high-efficiency high-power amplifier are presented. The amplifiers are manufactured in a GaAs MESFET process. The 3-Watt amplifier exhibits 4 Watt output power at 10.6 GHz with an associated PAE of 43% and more than 3 Watt output power with more than 30% PAE from 8 GHz to 11.3 GHz. The 5-Watt amplifier exhibits 7W output power at 8.8 GHz with an associated PAE of 40% and more than 5 Watt output power with more than 30% PAE from 7.8 GHz to 10.6 GHz.
Author: Inder Bahl Publisher: John Wiley & Sons ISBN: 9780470462317 Category : Technology & Engineering Languages : en Pages : 696
Book Description
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Author: Michel Ann Reece
Author: Michel Ann Reece
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Author: Edward J. Haugland
Author: Paolo Colantonio
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Author: Inder Bahl