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Author: Sai Neeraj Kandoori Publisher: ISBN: Category : Languages : en Pages : 66
Book Description
The main objective of this project is to develop a physics based analytical model of Gallium Nitride (GaN) MESFETs device to determine the frequency response under the influence of a trap center in the interface of channel and substrate. The frequency response has been determined by evaluating the channel current, trans conductance, gate-source capacitance and gate-drain capacitance with/without the trap center effect. The research work has been executed by Matlab and the channel current has been evaluated by merging linear and non-linear regions to show the properties of trap effect on I-V characteristics. The effect of the traps center is extremely important for wide bandgap semiconductors due to the non-maturity of the material.
Author: Sai Neeraj Kandoori Publisher: ISBN: Category : Languages : en Pages : 66
Book Description
The main objective of this project is to develop a physics based analytical model of Gallium Nitride (GaN) MESFETs device to determine the frequency response under the influence of a trap center in the interface of channel and substrate. The frequency response has been determined by evaluating the channel current, trans conductance, gate-source capacitance and gate-drain capacitance with/without the trap center effect. The research work has been executed by Matlab and the channel current has been evaluated by merging linear and non-linear regions to show the properties of trap effect on I-V characteristics. The effect of the traps center is extremely important for wide bandgap semiconductors due to the non-maturity of the material.
Author: Publisher: ISBN: Category : Languages : en Pages : 0
Book Description
A physics based model for GaN MESFETs is developed to determine the frequency dispersion of output resistance and transconductance due to traps. The equivalent circuit parameters are obtained by considering the physical mechanisms for current collapse and the associated trap dynamics. Detrapping time extracted from drain-lag measurements are 1.55 seconds and 58.42 seconds indicating trap levels at 0.69eV and 0.79eV, respectively. The dispersion frequency is in the range of MMz at elevated temperature, where a typical GaN power device may operate, although at room temperature it may be few Hz. For a 1.5 micrometers. 150 micrometers GaN MESFET with drain and gate biases of 10V and -5V respectively, 5% decrease in transconductance and 62% decrease in output resistance at RF frequencies from their DC values are observed. The dispersion characteristics are found to be bias dependent. A significant decrease in transconductance is observed when the device operates in the region where detrapping is significant. As gate bias approaches toward cutoff, the difference between output resistance at DC and that at RF increases. For drain and gate biases of 10V and -5V, output resistance decreases from 60.2 k. at DC to 7.5 k. at RF for a 1.5 micrometers. 150 micrometers GaN MESFET. This article was published in IEEE Transactions on Electron Devices, Vol. 51, No. 6, pp. 846-853, June 2004.
Author: Rumman Raihan Publisher: ISBN: Category : Languages : en Pages : 55
Book Description
A physics based analytical modeling for Gallium Nitride (GaN) MESFET has been developed in this project to calculate drain to source current versus drain to source voltage and the transconductance with and without traps centers using MATLAB software. The drain-bias dependence of trapped carrier concentration has been calculated and incorporated in drain current and transconductance to study the traps behavior on drain current and transconductance. The drain current has been developed by two sets of equations for non-saturation and saturation current components and two current equations have been merged by optimizing different physical parameters. Hence, the current clearly shows linear and non-linear properties to validate the device performance. The transconductance has been derived from the derivative of saturated drain current function to gate-source voltage for constant drain-source voltage. The threshold voltage has been determined from the gate-source voltage, when the transconductance is equal to zero. The transconductance has been also determined for various active channel thicknesses, which reflects the device frequency performance.
Author: Srikanth Movva Publisher: ISBN: Category : Languages : en Pages : 53
Book Description
This project involves in determining the frequency response considering the effect of transconductance and gate capacitance by developing an analytical model of Silicon Carbide (SiC) MESFETs device. The dispersion characteristics are observed to be dependent on bulk traps effects. I-V characteristics of SiC MESFET have been evaluated to determine the power-aided efficiency and switching performance from the linearity and linearity behaviors of drain current. The significant change of drain current, transconductance and gate-source capacitance have been observed due to the bulk traps effects on charge carrier reflecting GHz frequency performance of SiC MESFET device. The results of device performance simulated by MatLab tool have been described chronologically in the result and discussion chapter.
Author: Hadis Morkoç Publisher: John Wiley & Sons ISBN: 3527628452 Category : Technology & Engineering Languages : en Pages : 902
Book Description
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.
Author: Jun Zhang Publisher: Springer Science & Business Media ISBN: 3642232221 Category : Computers Languages : en Pages : 700
Book Description
The five volume set CCIS 224-228 constitutes the refereed proceedings of the International conference on Applied Informatics and Communication, ICAIC 2011, held in Xi'an, China in August 2011. The 446 revised papers presented were carefully reviewed and selected from numerous submissions. The papers cover a broad range of topics in computer science and interdisciplinary applications including control, hardware and software systems, neural computing, wireless networks, information systems, and image processing.
Author: Jimit Gandhi Publisher: ISBN: Category : Languages : en Pages : 84
Book Description
GaN material becomes a prime candidate for high power and frequency amplifiers for its properties like high electric breakdown voltage, stability and good thermal conductivity, wide bandgap and high electron velocity. A physics based analytical model for GaN MESFET is developed, taking into consideration different fabrication parameters like Ion range, Ion dose, annealing parameters, ion energy and physical parameters like channel thickness, impurity doping concentration and substrate doping to obtain optimized values for threshold voltage, intrinsic parameters like, Internal gate-drain resistance, Transconductance, gate-drain capacitance and source-drain current. The intrinsic parameters were studied for the explanation of frequency response of the device made from GaN material. The detailed analysis of which has been explained in the theory section of chapter 4 and chapter 5.
Author: Vidit Shah Publisher: ISBN: Category : Languages : en Pages : 59
Book Description
In this project, a physics-based simulation model is proposed for Gallium Nitride (GaN) based metal semiconductor field effect transistor (MESFET) by using MATLAB software. GaN MESFET has an enormous popular high power at microwave frequencies due to their wide bandgap structures of high electrical breakdown field strength, high electron saturation velocity and high operational temperature. A physics-based simulation model of Gallium Nitride based MESFET's has been established as high purity semi-insulating substrates to find the interaction of traps influence between the channel and substrates. I-V characteristics with the influence of traps and without traps, I-V characteristics with field dependent mobility and the transconductance with traps and without traps have been estimated to understand the power aided efficiency and frequency performance and discussed in the following chapter.
Author: Sai Neeraj Kandoori
Author: Sai Neeraj Kandoori
Author: 
Author: Rumman Raihan
Author: Srikanth Movva
Author: Hadis Morkoç
Author: Jun Zhang
Author: Jimit Gandhi
Author: Vidit Shah
Author: 
Author: Endalkachew Shewarega Mengistu