A Master Equation Approach to the Simulation of Electron Transport in Small Semiconductor Devices PDF Download

Author: International Business Machines Corporation. Research Division
Publisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 4

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Book Description

Author: Xiaolin Lei
Publisher: World Scientific Publishing Company
ISBN: 9813107286
Category : Technology & Engineering
Languages : en
Pages : 657

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Book Description
This book presents a systematic, comprehensive and up-to-date description of the physical basis of the balance equation transport theory and its applications in bulk and low-dimensional semiconductors. The different aspects of the balance equation method, originally proposed by C S Ting and the author of the present book, were reviewed in the volume entitled Physics of Hot Electron Transport in Semiconductors (edited by C S Ting, World Scientific, 1992). Since then, this method has been extensively developed and applied to various new fields, such as transport in nonparabolic systems, spatially nonuniform systems and semiconductor devices, miniband conduction of superlattices, hot-electron magnetotransport, effects of impact ionization in transport, microwave-induced magnetoresistance oscillation, radiation-driven transport and electron cooling, etc. Due to its simplicity and effectiveness, the balance equation approach has become a useful tool to tackle the many transport phenomena in semiconductors, and provides a reliable basis for developing theories, modeling devices and explaining experiments.The book may be used as a textbook by graduate students. It will also benefit researchers in the field by helping them grasp the basic principles and techniques of the method, without having to spend a lot of time digging out the information from widespread literature covering a period of 30 years.

Author: Carlo Jacoboni
Publisher: Springer Science & Business Media
ISBN: 3642105866
Category : Science
Languages : en
Pages : 590

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Book Description
This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.

Author: Damien Querlioz
Publisher: John Wiley & Sons
ISBN: 1118618440
Category : Technology & Engineering
Languages : en
Pages : 191

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Book Description
The emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.

Author: François Triozon
Publisher: John Wiley & Sons
ISBN: 111876188X
Category : Technology & Engineering
Languages : en
Pages : 341

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Book Description
Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.

Author: Mahdi Pourfath
Publisher: Springer
ISBN: 370911800X
Category : Technology & Engineering
Languages : en
Pages : 268

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Book Description
For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.

Author: Tibor Grasser
Publisher: World Scientific
ISBN: 9789812386076
Category : Technology & Engineering
Languages : en
Pages : 220

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Book Description
Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.

Author: Viktor Sverdlov
Publisher: Springer Science & Business Media
ISBN: 3709103827
Category : Technology & Engineering
Languages : en
Pages : 260

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Book Description
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Author: Martin Galler
Publisher: World Scientific
ISBN: 9812703381
Category : Technology & Engineering
Languages : en
Pages : 250

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Book Description
Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a semiconductor heterostructure. Concerning semiconductor device simulation, several diodes and transistors fabricated of silicon and gallium arsenide are investigated. For all of these simulations, the numerical techniques employed are discussed in detail. This unique study of the application of direct methods for semiconductor device simulation provides the interested reader with an indispensable reference on this growing research area.

Author: Mihail Nedjalkov
Publisher: Springer Nature
ISBN: 3030679179
Category : Mathematics
Languages : en
Pages : 214

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Book Description
The book serves as a synergistic link between the development of mathematical models and the emergence of stochastic (Monte Carlo) methods applied for the simulation of current transport in electronic devices. Regarding the models, the historical evolution path, beginning from the classical charge carrier transport models for microelectronics to current quantum-based nanoelectronics, is explicatively followed. Accordingly, the solution methods are elucidated from the early phenomenological single particle algorithms applicable for stationary homogeneous physical conditions up to the complex algorithms required for quantum transport, based on particle generation and annihilation. The book fills the gap between monographs focusing on the development of the theory and the physical aspects of models, their application, and their solution methods and monographs dealing with the purely theoretical approaches for finding stochastic solutions of Fredholm integral equations.