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Author: Achim Seidel Publisher: Springer Nature ISBN: 3030689409 Category : Technology & Engineering Languages : en Pages : 137
Book Description
This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.
Author: Achim Seidel Publisher: Springer Nature ISBN: 3030689409 Category : Technology & Engineering Languages : en Pages : 137
Book Description
This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.
Author: Matteo Meneghini Publisher: Springer ISBN: 3319431994 Category : Technology & Engineering Languages : en Pages : 383
Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author: Alex Lidow Publisher: John Wiley & Sons ISBN: 1119594421 Category : Science Languages : en Pages : 518
Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Author: James M.. Fiore Publisher: ISBN: 9788172247782 Category : Linear integrated circuits Languages : en Pages : 0
Book Description
The goal of this book is to encourage the reader to become proficient in the analysis and design of circuits utilizing modern linear integrated circuits. It progresses from the fundamental circuit building blocks through to analog and digital conversion systems. A methodical step-by-step presentation introduces the basic idealized operational amplifiers and eventually examines practical limitations in great detail. Each chapter has a problem set and contains extended topic to present extra discussion and details about the subject.
Author: Meiyong Liao Publisher: Elsevier ISBN: 0128172568 Category : Technology & Engineering Languages : en Pages : 506
Book Description
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Author: F. Patrick McCluskey Publisher: CRC Press ISBN: 9780849396236 Category : Technology & Engineering Languages : en Pages : 354
Book Description
The development of electronics that can operate at high temperatures has been identified as a critical technology for the next century. Increasingly, engineers will be called upon to design avionics, automotive, and geophysical electronic systems requiring components and packaging reliable to 200 °C and beyond. Until now, however, they have had no single resource on high temperature electronics to assist them. Such a resource is critically needed, since the design and manufacture of electronic components have now made it possible to design electronic systems that will operate reliably above the traditional temperature limit of 125 °C. However, successful system development efforts hinge on a firm understanding of the fundamentals of semiconductor physics and device processing, materials selection, package design, and thermal management, together with a knowledge of the intended application environments. High Temperature Electronics brings together this essential information and presents it for the first time in a unified way. Packaging and device engineers and technologists will find this book required reading for its coverage of the techniques and tradeoffs involved in materials selection, design, and thermal management and for its presentation of best design practices using actual fielded systems as examples. In addition, professors and students will find this book suitable for graduate-level courses because of its detailed level of explanation and its coverage of fundamental scientific concepts. Experts from the field of high temperature electronics have contributed to nine chapters covering topics ranging from semiconductor device selection to testing and final assembly.
Author: Andrzej M. Trzynadlowski Publisher: John Wiley & Sons ISBN: 1119003229 Category : Technology & Engineering Languages : en Pages : 472
Book Description
Provides comprehensive coverage of the basic principles and methods of electric power conversion and the latest developments in the field This book constitutes a comprehensive overview of the modern power electronics. Various semiconductor power switches are described, complementary components and systems are presented, and power electronic converters that process power for a variety of applications are explained in detail. This third edition updates all chapters, including new concepts in modern power electronics. New to this edition is extended coverage of matrix converters, multilevel inverters, and applications of the Z-source in cascaded power converters. The book is accompanied by a website hosting an instructor’s manual, a PowerPoint presentation, and a set of PSpice files for simulation of a variety of power electronic converters. Introduction to Modern Power Electronics, Third Edition: Discusses power conversion types: ac-to-dc, ac-to-ac, dc-to-dc, and dc-to-ac Reviews advanced control methods used in today’s power electronic converters Includes an extensive body of examples, exercises, computer assignments, and simulations Introduction to Modern Power Electronics, Third Edition is written for undergraduate and graduate engineering students interested in modern power electronics and renewable energy systems. The book can also serve as a reference tool for practicing electrical and industrial engineers.
Author: Satoshi Koizumi Publisher: Woodhead Publishing ISBN: 0081021844 Category : Technology & Engineering Languages : en Pages : 468
Book Description
Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics
Author: Linden T. Harrison Publisher: Elsevier ISBN: 0080455557 Category : Technology & Engineering Languages : en Pages : 603
Book Description
Current Sources and Voltage References provides fixed, well-regulated levels of current or voltage within a circuit. These are two of the most important "building blocks " of analog circuits, and are typically used in creating most analog IC designs. Part 1 shows the reader how current sources are created, how they can be optimized, and how they can be utilized by the OEM circuit designer. The book serves as a "must-have reference for the successful development of precision circuit applications. It shows practical examples using either BJTs, FETs, precision op amps, or even matched CMOS arrays being used to create highly accurate current source designs, ranging from nanoAmps to Amps. In each chapter the most important characteristics of the particular semiconductor type being studied are carefully reviewed. This not only serves as a helpful refresher for experienced engineers, but also as a good foundation for all EE student coursework, and includes device models and relevant equations.Part 2 focuses on semiconductor voltage references, from their design to their various practical enhancements. It ranges from the simple Zener diode to today's most advanced topologies, including Analog Devices' XFET® and Intersil's FGATM (invented while this book was being written). Over 300 applications and circuit diagrams are shown throughout this easy-to-read, practical reference book.* Discusses how to design low-noise, precision current sources using matched transistor pairs.* Explains the design of high power current sources with power MOSFETs* Gives proven techniques to reduce drift and improve accuracy in voltage references.
Author: Achim Seidel
Author: Achim Seidel
Author: Matteo Meneghini
Author: Alex Lidow
Author: James M.. Fiore
Author: Meiyong Liao
Author: F. Patrick McCluskey
Author: Andrzej M. Trzynadlowski
Author: Paul Horowitz
Author: Satoshi Koizumi
Author: Linden T. Harrison