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Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
A key element in a GaAs MMIC Transmit/Receive module for active Phased-array application is the phase-shifter needed for the electronic beam steering; because of the circuit complexity and usually large chip size the technological and electrical yield must be maximized. In the present work the design, realisation and performance of an X-band, four-bit phase shifter, using a high-yield technology and a tolerant electric circuit are described.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
A key element in a GaAs MMIC Transmit/Receive module for active Phased-array application is the phase-shifter needed for the electronic beam steering; because of the circuit complexity and usually large chip size the technological and electrical yield must be maximized. In the present work the design, realisation and performance of an X-band, four-bit phase shifter, using a high-yield technology and a tolerant electric circuit are described.
Author: Matthew A. Morton Publisher: ISBN: Category : Error analysis (Mathematics) Languages : en Pages :
Book Description
A comprehensive study of the High-pass/Low-pass topology has been performed, increasing the understanding of error sources arising from bit layout issues and fabrication tolerances. This included a detailed analysis of error sources in monolithic microwave phase shifters due to device size limitations, inductor parasitics, loading effects, and non-ideal switches. Each component utilized in the implementation of a monolithic high-low pass phase shifter was analyzed, with its influence on phase behavior shown in detail. An emphasis was placed on the net impact on absolute phase variation, which is critical to the system performance of a phased array radar system. The design of the individual phase shifter filter sections, and the influence of bit ordering on overall performance was also addressed. A variety of X-band four- and five-bit phase shifters were fabricated in a 200 GHz SiGe HBT BiCMOS technology platform, and further served to validate the analysis and design methodology. The SiGe phase shifter can be successfully incorporated into a single-chip T/R module forming a system-on-a-chip (SoC). Reduction in the physical size of transmission lines was shown to be a possibility with spinel magnetic nanoparticle films. The signal transmission properties of phase lines treated with nanoparticle thin films were examined, showing the potential for significant size reduction in both delay line and High-pass/Low-pass phase topologies. Wide-band, low-loss, and near-hermetic packaging techniques for RF MEMS devices were presented. A thermal compression bonding technique compatible with standard IC fabrication techniques was shown, that uses a low temperature thermal compression bonding method that avoids plastic deformations of the MEMS membrane. Ultimately, a system-on-a-package (SoP) approach was demonstrated that utilized packaged RF MEMS switches to maintain the performance of the SiGe phase shifter with much lower loss. The extremely competitive performance of the MEMS-based High-pass/Low-pass phase shifter, despite the lack of the extensive toolkits and commercial fabrication facilities employed with the active-based SiGe phase shifters, confirms both the effectiveness of the detailed phase error analysis presented in this work and the robust nature of the High-pass/Low-pass topology.
Author: Inder J. Bahl Publisher: Artech House ISBN: 1630819336 Category : Technology & Engineering Languages : en Pages : 593
Book Description
Fully updated and including entirely new chapters, this Second Edition provides in-depth coverage of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers. Featuring extensive formulas for lumped elements, design trade-offs, and an updated and current list of references, the book helps you understand the value and usefulness of lumped elements in the design of RF, microwave and millimeter wave components and circuits. You’ll find a balanced treatment between standalone lumped elements and their circuits using MICs, MMICs and RFICs technologies. You’ll also find detailed information on a broader range RFICs that was not available when the popular first edition was published. The book captures – in one consolidated volume -- the fundamentals, equations, modeling, examples, references and overall procedures to design, test and produce microwave components that are indispensable in industry and academia today. With its superb organization and expanded coverage of the subject, this is a must-have, go-to resource for practicing engineers and researchers in industry, government and university and microwave engineers working in the antenna area. Students will also find it a useful reference with its clear explanations, many examples and practical modeling guidelines.
Author: Norman G. Einspruch Publisher: Academic Press ISBN: 1483217779 Category : Technology & Engineering Languages : en Pages : 472
Book Description
VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
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Author: Matthew A. Morton
Author: Inder J. Bahl
Author: Fazal Ali
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Author: Norman G. Einspruch
Author: Joseph Steinmetz Hayden
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Author: Liviu Moldovan