A High-temperature Silicon-on-insulator Gate Driver IC for Silicon Carbide Junction Field Effect Transistor PDF Download

Author: Edgar Santiago Cilio
Publisher:
ISBN:
Category : Power electronics
Languages : en
Pages : 196

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Author: Mohammad Aminul Huque
Publisher:
ISBN:
Category :
Languages : en
Pages : 105

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Book Description
High-temperature integrated circuit (IC) design is one of the new frontiers in microelectronics that can significantly improve the performance of the electrical systems in extreme environment applications, including automotive, aerospace, well-logging, geothermal, and nuclear. Power modules (DC-DC converters, inverters, etc.) are key components in these electrical systems. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing silicon carbide (SiC) based power switches which are capable of operating at much higher temperature than silicon (Si) and gallium arsenide (GaAs) based conventional devices. For successful realization of such high-temperature power electronic circuits, associated control electronics also need to perform at high temperature. In any power converter, gate driver circuit performs as the interface between a low-power microcontroller and the semiconductor power switches. This dissertation presents design, implementation, and measurement results of a silicon-on-insulator (SOI) based high-temperature (>200° C) and high-voltage (>30 V) universal gate driver integrated circuit with high drive current (>3 A) for SiC power switches. This mixed signal IC has primarily been designed for automotive applications where the under-hood temperature can reach 200° C. Prototype driver circuits have been designed and implemented in a Bipolar-CMOS- DMOS (BCD) on SOI process and have been successfully tested up to 200° C ambient temperature driving SiC switches (MOSFET and JFET) without any heat sink and thermal management. This circuit can generate 30V peak-to-peak gate drive signal and can source and sink 3A peak drive current. Temperature compensating and temperature independent design techniques are employed to design the critical functional units like dead-time controller and level shifters in the driver circuit. Chip-level layout techniques are employed to enhance the reliability of the circuit at high temperature. High-temperature test boards have been developed to test the prototype ICs. An ultra low power on-chip temperature sensor circuit has also been designed and integrated into the gate-driver die to safeguard the driver circuit against excessive die temperature (> 220° C). This new temperature monitoring approach utilizes a reverse biased p-n junction diode as the temperature sensing element. Power consumption of this sensor circuit is less than 10 [mu]W at 200° C.

Author: Khoa Minh Phan
Publisher:
ISBN:
Category : Silicon-on-insulator technology
Languages : en
Pages : 178

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Author: Nicholas Summers
Publisher:
ISBN:
Category : Junction transistors
Languages : en
Pages : 58

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Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external drive circuits to generate pulse width modulated (PWM) signals switching from 0V to approximately 10V. Advanced CMOS microcontrollers are ideal for generating the PWM signals but are limited in output voltage due to their low breakdown voltage within the CMOS drive circuits. As a result, an intermediate buffer stage is required between the CMOS circuitry and the JFET. In this thesis, a discrete silicon-on-insulator (SOI) metal semiconductor field effect transistor (MESFET) was used to drive the gate of a SiC power JFET switching a 120V RMS AC supply into a 30Ω load. The wide operating temperature range and high breakdown voltage of up to 50V make the SOI MESFET ideal for power electronics in extreme environments. Characteristic curves for the MESFET were measured up to 250°C. To drive the JFET, the MESFET was DC biased and then driven by a 1.2V square wave PWM signal to switch the JFET gate from 0 to 10V at frequencies up to 20kHz. For simplicity, the 1.2V PWM square wave signal was provided by a 555 timer. The JFET gate drive circuit was measured at high temperatures up to 235°C. The circuit operated well at the high temperatures without any damage to the SOI MESFET or SiC JFET. The drive current of the JFET was limited by the duty cycle range of the 555 timer used. The SiC JFET drain current decreased with increased temperature. Due to the easy integration of MESFETs into SOI CMOS processes, MESFETs can be fabricated alongside MOSFETs without any changes in the process flow. This thesis demonstrates the feasibility of integrating a MESFET with CMOS PWM circuitry for a completely integrated SiC driver thus eliminating the need for the intermediate buffer stage.

Author: Peter Friedrichs
Publisher: John Wiley & Sons
ISBN: 9783527629084
Category : Science
Languages : en
Pages : 520

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Book Description
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.

Author: Kazanbas, Mehmet
Publisher: kassel university press GmbH
ISBN: 3862198227
Category :
Languages : en
Pages : 168

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Book Description
With the continual increase in the global energy consumption, grows the demand on the power capacity, efficient production, distribution and utilization of the electrical energy generated. The role of power electronics in such contexts has been of great importance not only for the traditional power generator systems but also for the decentralized renewable energy generation, like solar and wind power. Several innovations can be observed in the field of power systems for renewable energy sources based on power electronics. Improvements can be identified regarding for example control techniques, semiconductor devices, electromagnetic components and also topologies. Such developments allow specific application requirements to be fulfilled with lower levels of losses and less material expenditure. In this thesis, power electronic topologies are analyzed with respect to the type of electrical isolation between the input and output, which may differ in three ways: galvanic, capacitive and electronic. Among the above requirements, “galvanic isolation” is a major issue in photovoltaic applications, not only due to regulations concerning the grounding of PV modules but also because of compatibility requirements of new cell technologies. Within this framework, a theoretical and practical examination on new inverter topologies is investigated with electronic isolation method in order to meet the targeted future challenge aspects.

Author: B. Jayant Baliga
Publisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 420

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Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Author: Lisa V. Rozario
Publisher:
ISBN:
Category : Materials at high temperatures
Languages : en
Pages : 226

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Author: United States. Patent and Trademark Office
Publisher:
ISBN:
Category : Patents
Languages : en
Pages : 1436

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Author: Rajan Raj Lamichhane
Publisher:
ISBN: 9781303673061
Category : Battery chargers
Languages : en
Pages : 222

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Book Description
The potential of silicon carbide (SiC) for modern power electronics applications is revolutionary because of its superior material properties including substantially better breakdown voltage, power density, device leakage, thermal conductivity, and switching speed. Integration of gate driver circuitry on the same chip, or in the same package, as the power device would significantly reduce the parasitic inductance, require far less thermal management paraphernalia, reduce cost and size of the system, and result in more efficient and reliable electrical and thermal performance of the system. The design of a gate driver circuit with good performance parameters in this completely new under-development SiC process is the key to realization of this ultimate goal of integrating a SiC gate driver with a SiC power MOSFET. The objective of this joint undertaking is integration of the designed gate driver into the electronic battery charger onboard the new plug-in hybrid Toyota Prius. The ultimate goal of the project is in-vehicle demonstration and commercialization. This high frequency charger will be five times more powerful with a 10 times size reduction and significant cost reduction on the long run. This thesis presents the design, layout, simulation, testing and verification of a gate driver circuit implemented and fabricated in the Cree SiC process. The gate driver has a rise time and fall time of 45 ns and 41 ns, respectively, when driving a SiC power MOSFET with peak current reaching around 3 A. At a switching frequency of 500 kHz, the gate driver power dissipation was around 6.5 W. The gate driver was operable over a temperature range between 25 °C and 420 °C with only slight degradation in performance parameters. This thesis will provide a comprehensive overview of gate driver design and testing phases with relevant background.