A Design Study on the Scaling Limit of Ultra-thin Silicon-on-insulator MOSFETs PDF Download
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Author: Wei-Yuan Lu Publisher: ISBN: 9781109879605 Category : Languages : en Pages : 124
Book Description
As bulk CMOS is approaching its scaling limit, SOI CMOS is gaining more and more attentions and is considered as a potential candidate for achieving 10-nm CMOS. Fully-depleted SOI MOSFETs have several inherent advantages over bulk MOSFETs-low junction capacitance, no body effect and no need for body doping to confine gate depletion. This dissertation presents a comprehensive, 2-D simulation-based design study on the scaling limit of ultra-thin silicon-on-insulator MOSFETs.
Author: Wei-Yuan Lu Publisher: ISBN: 9781109879605 Category : Languages : en Pages : 124
Book Description
As bulk CMOS is approaching its scaling limit, SOI CMOS is gaining more and more attentions and is considered as a potential candidate for achieving 10-nm CMOS. Fully-depleted SOI MOSFETs have several inherent advantages over bulk MOSFETs-low junction capacitance, no body effect and no need for body doping to confine gate depletion. This dissertation presents a comprehensive, 2-D simulation-based design study on the scaling limit of ultra-thin silicon-on-insulator MOSFETs.
Author: Gang He Publisher: John Wiley & Sons ISBN: 3527646361 Category : Technology & Engineering Languages : en Pages : 560
Book Description
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Author: Alexander Starikov Publisher: SPIE-International Society for Optical Engineering ISBN: 9780819448477 Category : Computers Languages : en Pages : 434
Author: Howard Huff Publisher: Springer Science & Business Media ISBN: 9783540210818 Category : Science Languages : en Pages : 740
Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Author: Krzysztof Iniewski Publisher: CRC Press ISBN: 1351833359 Category : Technology & Engineering Languages : en Pages : 602
Book Description
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
Author: Publisher: Newnes ISBN: 0080932282 Category : Science Languages : en Pages : 3572
Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author: Wei-Yuan Lu
Author: Wei-Yuan Lu
Author: Anis Suhaila Mohd Zain
Author: Marijan Peršun
Author: 
Author: Yee-Chia Yeo
Author: Gang He
Author: Alexander Starikov
Author: Howard Huff
Author: Krzysztof Iniewski
Author: