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Author: Denny D. Tang Publisher: John Wiley & Sons ISBN: 1119562236 Category : Science Languages : en Pages : 352
Book Description
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.
Author: Denny D. Tang Publisher: John Wiley & Sons ISBN: 1119562236 Category : Science Languages : en Pages : 352
Book Description
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.
Author: Victor Grimblatt Publisher: Springer Nature ISBN: 3031168186 Category : Computers Languages : en Pages : 275
Book Description
This book contains extended and revised versions of the best papers presented at the 29th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2021, held in Singapore, in October 2021*. The 12 full papers included in this volume were carefully reviewed and selected from the 44 papers (out of 75 submissions) presented at the conference. The papers discuss the latest academic and industrial results and developments as well as future trends in the field of System-on-Chip (SoC) design, considering the challenges of nano-scale, state-of-the-art and emerging manufacturing technologies. In particular they address cutting-edge research fields like low-power design of RF, analog and mixed-signal circuits, EDA tools for the synthesis and verification of heterogenous SoCs, accelerators for cryptography and deep learning and on-chip Interconnection system, reliability and testing, and integration of 3D-ICs. *The conference was held virtually.
Author: Andrea Redaelli Publisher: Woodhead Publishing ISBN: 0128209461 Category : Technology & Engineering Languages : en Pages : 364
Book Description
Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory
Author: Rino Micheloni Publisher: Springer Nature ISBN: 303103841X Category : Technology & Engineering Languages : en Pages : 178
Book Description
This book presents the basics of both NAND flash storage and machine learning, detailing the storage problems the latter can help to solve. At a first sight, machine learning and non-volatile memories seem very far away from each other. Machine learning implies mathematics, algorithms and a lot of computation; non-volatile memories are solid-state devices used to store information, having the amazing capability of retaining the information even without power supply. This book will help the reader understand how these two worlds can work together, bringing a lot of value to each other. In particular, the book covers two main fields of application: analog neural networks (NNs) and solid-state drives (SSDs). After reviewing the basics of machine learning in Chapter 1, Chapter 2 shows how neural networks can mimic the human brain; to accomplish this result, neural networks have to perform a specific computation called vector-by-matrix (VbM) multiplication, which is particularly power hungry. In the digital domain, VbM is implemented by means of logic gates which dictate both the area occupation and the power consumption; the combination of the two poses serious challenges to the hardware scalability, thus limiting the size of the neural network itself, especially in terms of the number of processable inputs and outputs. Non-volatile memories (phase change memories in Chapter 3, resistive memories in Chapter 4, and 3D flash memories in Chapter 5 and Chapter 6) enable the analog implementation of the VbM (also called “neuromorphic architecture”), which can easily beat the equivalent digital implementation in terms of both speed and energy consumption. SSDs and flash memories are strictly coupled together; as 3D flash scales, there is a significant amount of work that has to be done in order to optimize the overall performances of SSDs. Machine learning has emerged as a viable solution in many stages of this process. After introducing the main flash reliability issues, Chapter 7 shows both supervised and un-supervised machine learning techniques that can be applied to NAND. In addition, Chapter 7 deals with algorithms and techniques for a pro-active reliability management of SSDs. Last but not least, the last section of Chapter 7 discusses the next challenge for machine learning in the context of the so-called computational storage. No doubt that machine learning and non-volatile memories can help each other, but we are just at the beginning of the journey; this book helps researchers understand the basics of each field by providing real application examples, hopefully, providing a good starting point for the next level of development.
Author: Amanda Bienz Publisher: Springer Nature ISBN: 3031408438 Category : Computers Languages : en Pages : 677
Book Description
This volume constitutes the papers of several workshops which were held in conjunction with the 38th International Conference on High Performance Computing, ISC High Performance 2023, held in Hamburg, Germany, during May 21–25, 2023. The 49 revised full papers presented in this book were carefully reviewed and selected from 70 submissions. ISC High Performance 2023 presents the following workshops: 2nd International Workshop on Malleability Techniques Applications in High-Performance Computing (HPCMALL) 18th Workshop on Virtualization in High-Performance Cloud Computing (VHPC 23) HPC I/O in the Data Center (HPC IODC) Workshop on Converged Computing of Cloud, HPC, and Edge (WOCC’23) 7th International Workshop on In Situ Visualization (WOIV’23) Workshop on Monitoring and Operational Data Analytics (MODA23) 2nd Workshop on Communication, I/O, and Storage at Scale on Next-Generation Platforms: Scalable Infrastructures First International Workshop on RISC-V for HPC Second Combined Workshop on Interactive and Urgent Supercomputing (CWIUS) HPC on Heterogeneous Hardware (H3)
Author: Dionisios N. Pnevmatikatos Publisher: Springer ISBN: 3030275620 Category : Computers Languages : en Pages : 486
Book Description
This book constitutes the refereed proceedings of the 19th International Conference on Embedded Computer Systems: Architectures, Modeling, and Simulation, SAMOS 2019, held in Pythagorion, Samos, Greece, in July 2019. The 21 regular papers presented were carefully reviewed and selected from 55 submissions. The papers are organized in topical sections on system design space exploration; deep learning optimization; system security; multi/many-core scheduling; system energy and heat management; many-core communication; and electronic system-level design and verification. In addition there are 13 papers from three special sessions which were organized on topics of current interest: insights from negative results; machine learning implementations; and European projects.
Author: Shimeng Yu Publisher: CRC Press ISBN: 1000567575 Category : Computers Languages : en Pages : 214
Book Description
This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics. Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET Explores the new applications such as in-memory computing for AI hardware acceleration.
Author: Evelyn Tina Breyer Publisher: BoD – Books on Demand ISBN: 3755708523 Category : Technology & Engineering Languages : en Pages : 216
Book Description
Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Author: John Reuben Publisher: John Reuben ISBN: 3000778489 Category : Technology & Engineering Languages : en Pages : 163
Book Description
This book is written as an introductory textbook on Resistive Random Access Memory (ReRAM). ReRAM is a prominent emerging memory among other competing Non-Volatile Memories (NVM) seeking to replace flash memory. This book is based on the author's peer-reviewed research conducted at the Chair of Computer Architecture, FAU, Germany. Referring to his research and the most relevant research from the literature, the author presents the developments in this field concisely. The purpose is to clarify basic concepts and introduce the reader to ReRAM with an emphasis on circuit design. Hence, this book is written for university students considering a career in the semiconductor industry. Since the author's research was conducted in collaboration with a silicon foundry, hardware engineers will find this book practical and industry-relevant. Researchers in the field of In-Memory Computing will also benefit from this book since the NVM array is the basic substrate for such computing paradigms. This three-part book condenses the research and development of the last decade into eight chapters. In Part I, a good foundation is laid for understanding the individual device structure, its electrical characteristics, and modeling methodology. The different array configurations in which these memory devices are fabricated are also discussed. In Part II, the peripheral circuits -the CMOS circuits around the ReRAM array are discussed. They include sense amplifiers, programming circuits, and row/column access circuits. Recent developments such as the possibility to perform certain computing tasks in the ReRAM array are discussed in Part III.
Author: Denny D. Tang
Author: Denny D. Tang
Author: Victor Grimblatt
Author: Jonathan Mapelli
Author: Andrea Redaelli
Author: Rino Micheloni
Author: Amanda Bienz
Author: Dionisios N. Pnevmatikatos
Author: Shimeng Yu
Author: Evelyn Tina Breyer
Author: John Reuben