Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Silicon Carbide Power Devices PDF full book. Access full book title Silicon Carbide Power Devices by B. Jayant Baliga. Download full books in PDF and EPUB format.
Author: B. Jayant Baliga Publisher: World Scientific ISBN: 9812774521 Category : Technology & Engineering Languages : en Pages : 526
Book Description
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Author: B. Jayant Baliga Publisher: World Scientific ISBN: 9812774521 Category : Technology & Engineering Languages : en Pages : 526
Book Description
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Author: Karine Melissa Publisher: ISBN: 9781300244493 Category : Languages : en Pages : 38
Book Description
YNG LGCY MAGAZINE empowers youth through highlighting accomplishments, featuring young entrepreneurs and go-getters, sharing resources for parents, and producing fashion events and workshops to do so.
Author: F. Patrick McCluskey Publisher: CRC Press ISBN: 9780849396236 Category : Technology & Engineering Languages : en Pages : 354
Book Description
The development of electronics that can operate at high temperatures has been identified as a critical technology for the next century. Increasingly, engineers will be called upon to design avionics, automotive, and geophysical electronic systems requiring components and packaging reliable to 200 °C and beyond. Until now, however, they have had no single resource on high temperature electronics to assist them. Such a resource is critically needed, since the design and manufacture of electronic components have now made it possible to design electronic systems that will operate reliably above the traditional temperature limit of 125 °C. However, successful system development efforts hinge on a firm understanding of the fundamentals of semiconductor physics and device processing, materials selection, package design, and thermal management, together with a knowledge of the intended application environments. High Temperature Electronics brings together this essential information and presents it for the first time in a unified way. Packaging and device engineers and technologists will find this book required reading for its coverage of the techniques and tradeoffs involved in materials selection, design, and thermal management and for its presentation of best design practices using actual fielded systems as examples. In addition, professors and students will find this book suitable for graduate-level courses because of its detailed level of explanation and its coverage of fundamental scientific concepts. Experts from the field of high temperature electronics have contributed to nine chapters covering topics ranging from semiconductor device selection to testing and final assembly.
Author: Vaibhav K. Arghode Publisher: Springer ISBN: 3319258923 Category : Business & Economics Languages : en Pages : 90
Book Description
The Brief discuss primarily two aspects of air flow management in raised floor data centers. Firstly, cooling air delivery through perforated tiles will be examined and influence of the tile geometry on flow field development and hot air entrainment above perforated tiles will be discussed. Secondly, the use of cold aisle containment to physically separate hot and cold regions, and minimize hot and cold air mixing will be presented. Both experimental investigations and computational efforts are discussed and development of computational fluid dynamics (CFD) based models for simulating air flow in data centers is included. In addition, metrology tools for facility scale air velocity and temperature measurement, and air flow rate measurement through perforated floor tiles and server racks are examined and the authors present thermodynamics-based models to gauge the effectiveness and importance of air flow management schemes in data centers.
Author: Pradeep Lall Publisher: CRC Press ISBN: 0429605595 Category : Technology & Engineering Languages : en Pages : 332
Book Description
This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The
Author: Yogendra Joshi Publisher: Springer Science & Business Media ISBN: 1441971246 Category : Science Languages : en Pages : 635
Book Description
Energy Efficient Thermal Management of Data Centers examines energy flow in today's data centers. Particular focus is given to the state-of-the-art thermal management and thermal design approaches now being implemented across the multiple length scales involved. The impact of future trends in information technology hardware, and emerging software paradigms such as cloud computing and virtualization, on thermal management are also addressed. The book explores computational and experimental characterization approaches for determining temperature and air flow patterns within data centers. Thermodynamic analyses using the second law to improve energy efficiency are introduced and used in proposing improvements in cooling methodologies. Reduced-order modeling and robust multi-objective design of next generation data centers are discussed.
Author: Osamu Tabata Publisher: John Wiley & Sons ISBN: 9783527314942 Category : Technology & Engineering Languages : en Pages : 328
Book Description
This first book to cover exclusively and in detail the principles, tools and methods for determining the reliability of microelectromechanical materials, components and devices covers both component materials as well as entire MEMS devices. Divided into two major parts, following a general introductory chapter to reliability issues, the first part looks at the mechanical properties of the materials used in MEMS, explaining in detail the necessary measuring technologies -- nanoindenters, bulge methods, bending tests, tensile tests, and others. Part Two treats the actual devices, organized by important device categories such as pressure sensors, inertial sensors, RF MEMS, and optical MEMS.
Author: Prabhakar V. Varde Publisher: Springer ISBN: 9811300909 Category : Technology & Engineering Languages : en Pages : 579
Book Description
The book comprehensively covers the various aspects of risk modeling and analysis in technological contexts. It pursues a systems approach to modeling risk and reliability concerns in engineering, and covers the key concepts of risk analysis and mathematical tools used to assess and account for risk in engineering problems. The relevance of incorporating risk-based structures in design and operations is also stressed, with special emphasis on the human factor and behavioral risks. The book uses the nuclear plant, an extremely complex and high-precision engineering environment, as an example to develop the concepts discussed. The core mechanical, electronic and physical aspects of such a complex system offer an excellent platform for analyzing and creating risk-based models. The book also provides real-time case studies in a separate section to demonstrate the use of this approach. There are many limitations when it comes to applications of risk-based approaches to engineering problems. The book is structured and written in a way that addresses these key gap areas to help optimize the overall methodology. This book serves as a textbook for graduate and advanced undergraduate courses on risk and reliability in engineering. It can also be used outside the classroom for professional development courses aimed at practicing engineers or as an introduction to risk-based engineering for professionals, researchers, and students interested in the field.
Author: Wataru Nakayama Publisher: CRC Press ISBN: 9781584880264 Category : Technology & Engineering Languages : en Pages : 156
Book Description
The explosive growth of the Japanese electronics industry continues to be driven by a combination of market forces and the unique characteristics of the Japanese social organization and people. As an industrial phenomenon, the Japanese electronics industry receives considerable attention from researchers in various fields. However, most of their studies focus on either historical analyses intent on discovering the secret of the industry's enormous success, or on the issue of America's competitiveness in the face of challenges from Japanese technology. Moreover, none of these studies can be free of the bias that stems from each researcher's own upbringing and environment. The authors of The Japanese Electronics Industry have pooled their diverse experience and talents to create a balanced, objective study of this complex subject. They illuminate the history and characteristics of the industry, show the current state of the industry, and explore the research, development, and education vital to the future of the industry.
Author: Matteo Meneghini Publisher: Springer ISBN: 3319431994 Category : Technology & Engineering Languages : en Pages : 383
Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author: B. Jayant Baliga
Author: B. Jayant Baliga
Author: Karine Melissa
Author: F. Patrick McCluskey
Author: Vaibhav K. Arghode
Author: Pradeep Lall
Author: Yogendra Joshi
Author: Osamu Tabata
Author: Prabhakar V. Varde
Author: Wataru Nakayama
Author: Matteo Meneghini