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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2013)

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2013) PDF Author:
Publisher:
ISBN: 9781467351348
Category : Integrated circuits
Languages : en
Pages :

Book Description


2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2013)

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD 2013) PDF Author:
Publisher:
ISBN: 9781467351348
Category : Integrated circuits
Languages : en
Pages :

Book Description


2013 25th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

2013 25th International Symposium on Power Semiconductor Devices and IC's (ISPSD) PDF Author: IEEE Electrical Insulation Society Staff
Publisher:
ISBN: 9781467351331
Category :
Languages : en
Pages : 422

Book Description


Handbook of GaN Semiconductor Materials and Devices

Handbook of GaN Semiconductor Materials and Devices PDF Author: Wengang (Wayne) Bi
Publisher: CRC Press
ISBN: 1498747140
Category : Science
Languages : en
Pages : 709

Book Description
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Power Electronics in Renewable Energy Systems and Smart Grid

Power Electronics in Renewable Energy Systems and Smart Grid PDF Author: Bimal K. Bose
Publisher: John Wiley & Sons
ISBN: 1119515653
Category : Technology & Engineering
Languages : en
Pages : 705

Book Description
The comprehensive and authoritative guide to power electronics in renewable energy systems Power electronics plays a significant role in modern industrial automation and high- efficiency energy systems. With contributions from an international group of noted experts, Power Electronics in Renewable Energy Systems and Smart Grid: Technology and Applications offers a comprehensive review of the technology and applications of power electronics in renewable energy systems and smart grids. The authors cover information on a variety of energy systems including wind, solar, ocean, and geothermal energy systems as well as fuel cell systems and bulk energy storage systems. They also examine smart grid elements, modeling, simulation, control, and AI applications. The book's twelve chapters offer an application-oriented and tutorial viewpoint and also contain technology status review. In addition, the book contains illustrative examples of applications and discussions of future perspectives. This important resource: Includes descriptions of power semiconductor devices, two level and multilevel converters, HVDC systems, FACTS, and more Offers discussions on various energy systems such as wind, solar, ocean, and geothermal energy systems, and also fuel cell systems and bulk energy storage systems Explores smart grid elements, modeling, simulation, control, and AI applications Contains state-of-the-art technologies and future perspectives Provides the expertise of international authorities in the field Written for graduate students, professors in power electronics, and industry engineers, Power Electronics in Renewable Energy Systems and Smart Grid: Technology and Applications offers an up-to-date guide to technology and applications of a wide-range of power electronics in energy systems and smart grids.

Design of Power Management Integrated Circuits

Design of Power Management Integrated Circuits PDF Author: Bernhard Wicht
Publisher: John Wiley & Sons
ISBN: 1119123089
Category : Technology & Engineering
Languages : en
Pages : 484

Book Description
Design of Power Management Integrated Circuits Comprehensive resource on power management ICs affording new levels of functionality and applications with cost reduction in various fields Design of Power Management Integrated Circuits is a comprehensive reference for power management IC design, covering the circuit design of main power management circuits like linear and switched-mode voltage regulators, along with sub-circuits such as power switches, gate drivers and their supply, level shifters, the error amplifier, current sensing, and control loop design. Circuits for protection and diagnostics, as well as aspects of the physical design like lateral and vertical power delivery, pin-out, floor planning, grounding/supply guidelines, and packaging, are also addressed. A full chapter is dedicated to the design of integrated passives. The text illustrates the application of power management integrated circuits (PMIC) to growth areas like computing, the Internet of Things, mobility, and renewable energy. Includes numerous real-world examples, case studies, and exercises illustrating key design concepts and techniques. Offering a unique insight into this rapidly evolving technology through the author’s experience developing PMICs in both the industrial and academic environment, Design of Power Management Integrated Circuits includes information on: Capacitive, inductive and hybrid DC-DC converters and their essential circuit blocks, covering error amplifiers, comparators, and ramp generators Sensing, protection, and diagnostics, covering thermal protection, inductive loads and clamping structures, under-voltage, reference and power-on reset generation Integrated MOS, MOM and MIM capacitors, integrated inductors Control loop design and PWM generation ensuring stability and fast transient response; subharmonic oscillations in current mode control (analysis and circuit design for slope compensation) DC behavior and DC-related circuit design, covering power efficiency, line and load regulation, error amplifier, dropout, and power transistor sizing Commonly used level shifters (including sizing rules) and cascaded (tapered) driver sizing and optimization guidelines Optimizing the physical design considering packaging, floor planning, EMI, pinout, PCB design and thermal design Design of Power Management Integrated Circuits is an essential resource on the subject for circuit designers/IC designers, system engineers, and application engineers, along with advanced undergraduate students and graduate students in related programs of study.

Wideband Continuous-time ΣΔ ADCs, Automotive Electronics, and Power Management

Wideband Continuous-time ΣΔ ADCs, Automotive Electronics, and Power Management PDF Author: Andrea Baschirotto
Publisher: Springer
ISBN: 3319416707
Category : Technology & Engineering
Languages : en
Pages : 357

Book Description
This book is based on the 18 tutorials presented during the 25th workshop on Advances in Analog Circuit Design. Expert designers present readers with information about a variety of topics at the frontier of analog circuit design, including low-power and energy-efficient analog electronics, with specific contributions focusing on the design of continuous-time sigma-delta modulators, automotive electronics, and power management. This book serves as a valuable reference to the state-of-the-art, for anyone involved in analog circuit research and development.

Gallium Nitride (GaN)

Gallium Nitride (GaN) PDF Author: Farid Medjdoub
Publisher: CRC Press
ISBN: 1482220040
Category : Technology & Engineering
Languages : en
Pages : 372

Book Description
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Integrated High-Vin Multi-MHz Converters

Integrated High-Vin Multi-MHz Converters PDF Author: Jürgen Wittmann
Publisher: Springer Nature
ISBN: 3030252574
Category : Technology & Engineering
Languages : en
Pages : 184

Book Description
This book provides readers with guidelines for designing integrated multi-MHz-switching converters for input voltages/system supplies up to 50V or higher. Coverage includes converter theory, converter architectures, circuit design, efficiency, sizing of passives, technology aspects, etc. The author discusses new circuit designs, new architectures and new switching concepts, including dead-time control and soft-switching techniques that overcome current limitations of these converters. The discussion includes technology related issues and helps readers to choose the right technology for fast-switching converters. This book discusses benefits and drawbacks in terms of integration, size and cost, efficiency and complexity, and enables readers to make trade-offs in design, given different converter parameters. Describes a study for increasing switching frequencies up to 30 MHz at input voltages up to 50V or higher in the scaling of the size of switching converter passives; Analyzes various buck converter implementations and shows that a preference due to higher efficiency depends on the operating point, on the available switch technologies, and on the implementation of the high-side supply generation; Describes an efficiency model based on a four-phase model, which enables separation of loss causes and loss locations.

High Mobility Materials for CMOS Applications

High Mobility Materials for CMOS Applications PDF Author: Nadine Collaert
Publisher: Woodhead Publishing
ISBN: 0081020627
Category : Technology & Engineering
Languages : en
Pages : 390

Book Description
High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. - Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations - Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability - Provides a broad overview of the topic, from materials integration to circuits

Parasitic Substrate Coupling in High Voltage Integrated Circuits

Parasitic Substrate Coupling in High Voltage Integrated Circuits PDF Author: Pietro Buccella
Publisher: Springer
ISBN: 3319743821
Category : Technology & Engineering
Languages : en
Pages : 195

Book Description
This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis. Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.