Author: Publisher:
ISBN: 9781424459216
Category : Electronics
Languages : en
Pages :
Book Description
IPRM
Author: Publisher:
ISBN: 9781424459216
Category : Electronics
Languages : en
Pages :
Book Description
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Author: 2010 International Conference on Indium Phosphide and Related Materials (IPRM 2010)
Author: Ōyō-Butsuri-GakkaiPublisher:
ISBN: 9781424459209
Category :
Languages : en
Pages : 511
Book Description
2010 International Conference on Indium Phosphide and Related Materials
Author: Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Author: Institute of Electrical and Electronics EngineersPublisher:
ISBN: 9781424459193
Category : Bioengineering
Languages : en
Pages : 511
Book Description
International Conference on Indium Phosphide and Related Materials (22nd) (IPRM) Held on 31 May-4 Jun 2010, at Takamatsu Symbol Tower, Kagawa, Japan
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 533
Book Description
Topics in the proceedings include materials, growth, processing, devices and applications of InP and related materials as well as the use of other materials for traditional InP applications. Topics of interest include, but are not limited to the following: (1)Characterization and Bulk Materials (2)Epitaxy (3)Optoelectronics and Related Processing Technologies (4)Electron Devices and Related Processing Technologies (5)Nanostructures and Novel Materials.
Handbook for III-V High Electron Mobility Transistor Technologies
Author: D. NirmalPublisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 446
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: 
Author: 
Author: