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Author: J. W. McPherson Publisher: Springer Science & Business Media ISBN: 1441963480 Category : Technology & Engineering Languages : en Pages : 324
Book Description
All engineers could bene?t from at least one course in reliability physics and engineering. It is very likely that, starting with your very ?rst engineering po- tion, you will be asked — how long is your newly developed device expected to last? This text was designed to help you to answer this fundamentally important question. All materials and devices are expected to degrade with time, so it is very natural to ask — how long will the product last? The evidence for material/device degradation is apparently everywhere in nature. A fresh coating of paint on a house will eventually crack and peel. Doors in a new home can become stuck due to the shifting of the foundation. The new ?nish on an automobile will oxidize with time. The tight tolerances associated with ?nely meshed gears will deteriorate with time. Critical parameters associated with hi- precision semiconductor devices (threshold voltages, drive currents, interconnect resistances, capacitor leakages, etc.) will degrade with time. In order to und- stand the lifetime of the material/device, it is important to understand the reliability physics (kinetics) for each of the potential failure mechanisms and then be able to develop the required reliability engineering methods that can be used to prevent, or at least minimize the occurrence of, device failure.
Author: J. W. McPherson Publisher: Springer Science & Business Media ISBN: 1441963480 Category : Technology & Engineering Languages : en Pages : 324
Book Description
All engineers could bene?t from at least one course in reliability physics and engineering. It is very likely that, starting with your very ?rst engineering po- tion, you will be asked — how long is your newly developed device expected to last? This text was designed to help you to answer this fundamentally important question. All materials and devices are expected to degrade with time, so it is very natural to ask — how long will the product last? The evidence for material/device degradation is apparently everywhere in nature. A fresh coating of paint on a house will eventually crack and peel. Doors in a new home can become stuck due to the shifting of the foundation. The new ?nish on an automobile will oxidize with time. The tight tolerances associated with ?nely meshed gears will deteriorate with time. Critical parameters associated with hi- precision semiconductor devices (threshold voltages, drive currents, interconnect resistances, capacitor leakages, etc.) will degrade with time. In order to und- stand the lifetime of the material/device, it is important to understand the reliability physics (kinetics) for each of the potential failure mechanisms and then be able to develop the required reliability engineering methods that can be used to prevent, or at least minimize the occurrence of, device failure.
Author: ASM International Publisher: ASM International ISBN: 1627082735 Category : Technology & Engineering Languages : en Pages : 540
Book Description
The theme for the 2019 conference is Novel Computing Architectures. Papers will include discussions on the advent of Artificial Intelligence and the promise of quantum computing that are driving disruptive computing architectures; Neuromorphic chip designs on one hand, and Quantum Bits on the other, still in R&D, will introduce new computing circuitry and memory elements, novel materials, and different test methodologies. These novel computing architectures will require further innovation which is best achieved through a collaborative Failure Analysis community composed of chip manufacturers, tool vendors, and universities.
Author: Souvik Mahapatra Publisher: Springer ISBN: 8132225082 Category : Technology & Engineering Languages : en Pages : 282
Book Description
This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Author: Souvik Mahapatra Publisher: Springer Nature ISBN: 9811661200 Category : Technology & Engineering Languages : en Pages : 322
Book Description
This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
Author: Franklin Richard Nash, Ph.D. Publisher: CRC Press ISBN: 1498719201 Category : Business & Economics Languages : en Pages : 784
Book Description
This book provides engineers and scientists with a single source introduction to the concepts, models, and case studies for making credible reliability assessments. It satisfies the need for thorough discussions of several fundamental subjects. Section I contains a comprehensive overview of assessing and assuring reliability that is followed by discussions of: • Concept of randomness and its relationship to chaos • Uses and limitations of the binomial and Poisson distributions • Relationship of the chi-square method and Poisson curves • Derivations and applications of the exponential, Weibull, and lognormal models • Examination of the human mortality bathtub curve as a template for components Section II introduces the case study modeling of failure data and is followed by analyses of: • 5 sets of ideal Weibull, lognormal, and normal failure data • 83 sets of actual (real) failure data The intent of the modeling was to find the best descriptions of the failures using statistical life models, principally the Weibull, lognormal, and normal models, for characterizing the failure probability distributions of the times-, cycles-, and miles-to-failure during laboratory or field testing. The statistical model providing the preferred characterization was determined empirically by choosing the two-parameter model that gave the best straight-line fit in the failure probability plots using a combination of visual inspection and three statistical goodness-of-fit (GoF) tests. This book offers practical insight in dealing with single item reliability and illustrates the use of reliability methods to solve industry problems.
Author: Pascal Meinerzhagen Publisher: Springer ISBN: 3319604023 Category : Technology & Engineering Languages : en Pages : 151
Book Description
This book pioneers the field of gain-cell embedded DRAM (GC-eDRAM) design for low-power VLSI systems-on-chip (SoCs). Novel GC-eDRAMs are specifically designed and optimized for a range of low-power VLSI SoCs, ranging from ultra-low power to power-aware high-performance applications. After a detailed review of prior-art GC-eDRAMs, an analytical retention time distribution model is introduced and validated by silicon measurements, which is key for low-power GC-eDRAM design. The book then investigates supply voltage scaling and near-threshold voltage (NTV) operation of a conventional gain cell (GC), before presenting novel GC circuit and assist techniques for NTV operation, including a 3-transistor full transmission-gate write port, reverse body biasing (RBB), and a replica technique for optimum refresh timing. Next, conventional GC bitcells are evaluated under aggressive technology and voltage scaling (down to the subthreshold domain), before novel bitcells for aggressively scaled CMOS nodes and soft-error tolerance as presented, including a 4-transistor GC with partial internal feedback and a 4-transistor GC with built-in redundancy.
Author: Santanu Kundu Publisher: CRC Press ISBN: 1466565276 Category : Technology & Engineering Languages : en Pages : 388
Book Description
Addresses the Challenges Associated with System-on-Chip Integration Network-on-Chip: The Next Generation of System-on-Chip Integration examines the current issues restricting chip-on-chip communication efficiency, and explores Network-on-chip (NoC), a promising alternative that equips designers with the capability to produce a scalable, reusable, and high-performance communication backbone by allowing for the integration of a large number of cores on a single system-on-chip (SoC). This book provides a basic overview of topics associated with NoC-based design: communication infrastructure design, communication methodology, evaluation framework, and mapping of applications onto NoC. It details the design and evaluation of different proposed NoC structures, low-power techniques, signal integrity and reliability issues, application mapping, testing, and future trends. Utilizing examples of chips that have been implemented in industry and academia, this text presents the full architectural design of components verified through implementation in industrial CAD tools. It describes NoC research and developments, incorporates theoretical proofs strengthening the analysis procedures, and includes algorithms used in NoC design and synthesis. In addition, it considers other upcoming NoC issues, such as low-power NoC design, signal integrity issues, NoC testing, reconfiguration, synthesis, and 3-D NoC design. This text comprises 12 chapters and covers: The evolution of NoC from SoC—its research and developmental challenges NoC protocols, elaborating flow control, available network topologies, routing mechanisms, fault tolerance, quality-of-service support, and the design of network interfaces The router design strategies followed in NoCs The evaluation mechanism of NoC architectures The application mapping strategies followed in NoCs Low-power design techniques specifically followed in NoCs The signal integrity and reliability issues of NoC The details of NoC testing strategies reported so far The problem of synthesizing application-specific NoCs Reconfigurable NoC design issues Direction of future research and development in the field of NoC Network-on-Chip: The Next Generation of System-on-Chip Integration covers the basic topics, technology, and future trends relevant to NoC-based design, and can be used by engineers, students, and researchers and other industry professionals interested in computer architecture, embedded systems, and parallel/distributed systems.
Author: Marius Bazu Publisher: John Wiley & Sons ISBN: 1119990009 Category : Technology & Engineering Languages : en Pages : 372
Book Description
Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.
Author: George Dekoulis Publisher: BoD – Books on Demand ISBN: 9535132075 Category : Technology & Engineering Languages : en Pages : 280
Book Description
This edited volume "Field-Programmable Gate Array" is a collection of reviewed and relevant research chapters, offering a comprehensive overview of recent developments in the field of semiconductors. The book comprises single chapters authored by various researchers and edited by an expert active in the aerospace engineering systems research area. All chapters are complete within themselves but united under a common research study topic. This publication aims at providing a thorough overview of the latest research efforts by international authors and open new possible research paths for further novel developments.
Author: Eitan N. Shauly Publisher: CRC Press ISBN: 1000631354 Category : Technology & Engineering Languages : en Pages : 831
Book Description
Nowadays over 50% of integrated circuits are fabricated at wafer foundries. This book presents a foundry-integrated perspective of the field and is a comprehensive and up-to-date manual designed to serve process, device, layout, and design engineers. It comprises chapters carefully selected to cover topics relevant for them to deal with their work. The book provides an insight into the different types of design rules (DRs) and considerations for setting new DRs. It discusses isolation, gate patterning, S/D contacts, metal lines, MOL, air gaps, and so on. It explains in detail the layout rules needed to support advanced planarization processes, different types of dummies, and related utilities as well as presents a large set of guidelines and layout-aware modeling for RF CMOS and analog modules. It also discusses the layout DRs for different mobility enhancement techniques and their related modeling, listing many of the dedicated rules for static random-access memory (SRAM), embedded polyfuse (ePF), and LogicNVM. The book also provides the setting and calibration of the process parameters set and describes the 28~20 nm planar MOSFET process flow for low-power and high-performance mobile applications in a step-by-step manner. It includes FEOL and BEOL physical and environmental tests for qualifications together with automotive qualification and design for automotive (DfA). Written for the professionals, the book belongs to the bookshelf of microelectronic discipline experts.
Author: J. W. McPherson
Author: J. W. McPherson
Author: ASM International
Author: Souvik Mahapatra
Author: Souvik Mahapatra
Author: Franklin Richard Nash, Ph.D.
Author: Pascal Meinerzhagen
Author: Santanu Kundu
Author: Marius Bazu
Author: George Dekoulis
Author: Eitan N. Shauly