International Conference on the Physics of Semiconductors PDF Download

Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 988

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Author: Masashi Suezawa
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 660

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Author: Karl W. Böer
Publisher: Springer Nature
ISBN: 3031182863
Category : Technology & Engineering
Languages : en
Pages : 1408

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Book Description
This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.

Author: ASM International
Publisher: ASM International
ISBN: 1615030859
Category : Technology & Engineering
Languages : en
Pages : 456

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Author:
Publisher:
ISBN:
Category : Naval research
Languages : en
Pages : 300

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Author: P. Grosse
Publisher: Springer
ISBN: 3540753567
Category : Science
Languages : en
Pages : 323

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Author: N. Balkan
Publisher:
ISBN: 9780198500582
Category : Science
Languages : en
Pages : 536

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Book Description
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.

Author: Gottfried Landwehr
Publisher: Springer Science & Business Media
ISBN: 3642831141
Category : Science
Languages : en
Pages : 572

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High magnetic fields have been an important tool in semiconductor physics for a long time. The area has been growing very rapidly since quantum effects in silicon field-effect transistors have become of practical interest. Since the discovery of the quantum Hall effect by Klaus von Klitzing in 1980, this subject has grown exponentially. The book contains 42 invited papers and 37 contributed papers which were presented at the 7th of the traditional Würzburg conferences. For the area of high magnetic fields applied in semiconductor physics recent results are discussed, and the state-of-the-art is reviewed. More than 50% of the papers concern two-dimensional electronic systems. Other subjects of current interest are magneto-optics and magneto transport in three-dimensional semiconductors. Special attention has been paid to the rapidly growing field of semimagnetic semiconductors.

Author: Olof Engström
Publisher: Cambridge University Press
ISBN: 1316060624
Category : Technology & Engineering
Languages : en
Pages : 369

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This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.

Author: M. H. Pilkuhn
Publisher: Vieweg+teubner Verlag
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1368

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Book Description
The Twelfth International Conference on the Physics of Semiconductors was held at Stuttgart, Federal Republic of Germany, from July 15 to 19, 1974. The Conference was sponsored by the International Union of Pure and Applied Physics and we wish to thank this Organization as well as all the other Institutions and Companies listed on the preceding page for their substantial support. About 700 scientists from 31 countries came to Stuttgart in order to attend the Conference. Following the example of the previous Conference at Warsaw, a distinction was made between plenary invited and invited papers presented at parallel sessions. Altogether, the Proceedings contains 27 invited and 206 contributed papers. The members of the International Program Committee had the difficult task of making a selection from 550 abstracts. Their work was essential for the success of the Conference and it is gratefully acknow­ ledged. The number of pages alloted to each paper had to be limited in order to keep the Proceedings within reasonable size. In general, the papers in the Proceedings have been arranged according to the Conference Program except for the following changes: Each plenary invited paper was associated with an appropriate session, the sessions were put into a slightly different order and, in a few cases, new titles were introduced.